Details
| Original language | English |
|---|---|
| Title of host publication | 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2169-2175 |
| Number of pages | 7 |
| ISBN (electronic) | 9781728104942 |
| Publication status | Published - Jun 2019 |
| Externally published | Yes |
| Event | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
Silicon-based tandem cells are a potential upgrade for the dominating PERC technology and can greatly increase the conversion efficiency. A novel approach, the three-terminal (3T) tandem using interdigitated back-contact (IBC) cells, was shown to combine the advantages of four- and two-terminal tandem cells at the expense of a more complex bottom cell fabrication process. In this paper, we propose a simplified and lean PERC-like 3T bipolar junction bottom cell featuring two minority-carrier selective contacts and a single majority-carrier selective contact, and thus resembling a bipolar junction transistor architecture. We present the lean PERC-like fabrication process and explain the working principle by using current-voltage measurements of illuminated 3T IBC cells.
Keywords
- 3T, bipolar junction bottom cell, tandem, three-terminal
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2169-2175 8980645 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Three-Terminal Bipolar Junction Bottom Cell as Simple as PERC
T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019
AU - Rienacker, Michael
AU - Warren, Emily L.
AU - Wietler, Tobias F.
AU - Stradins, Paul
AU - Tamboli, Adele C.
AU - Peibst, Robby
N1 - Publisher Copyright: © 2019 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2019/6
Y1 - 2019/6
N2 - Silicon-based tandem cells are a potential upgrade for the dominating PERC technology and can greatly increase the conversion efficiency. A novel approach, the three-terminal (3T) tandem using interdigitated back-contact (IBC) cells, was shown to combine the advantages of four- and two-terminal tandem cells at the expense of a more complex bottom cell fabrication process. In this paper, we propose a simplified and lean PERC-like 3T bipolar junction bottom cell featuring two minority-carrier selective contacts and a single majority-carrier selective contact, and thus resembling a bipolar junction transistor architecture. We present the lean PERC-like fabrication process and explain the working principle by using current-voltage measurements of illuminated 3T IBC cells.
AB - Silicon-based tandem cells are a potential upgrade for the dominating PERC technology and can greatly increase the conversion efficiency. A novel approach, the three-terminal (3T) tandem using interdigitated back-contact (IBC) cells, was shown to combine the advantages of four- and two-terminal tandem cells at the expense of a more complex bottom cell fabrication process. In this paper, we propose a simplified and lean PERC-like 3T bipolar junction bottom cell featuring two minority-carrier selective contacts and a single majority-carrier selective contact, and thus resembling a bipolar junction transistor architecture. We present the lean PERC-like fabrication process and explain the working principle by using current-voltage measurements of illuminated 3T IBC cells.
KW - 3T
KW - bipolar junction bottom cell
KW - tandem
KW - three-terminal
UR - http://www.scopus.com/inward/record.url?scp=85077189715&partnerID=8YFLogxK
U2 - 10.1109/PVSC40753.2019.8980645
DO - 10.1109/PVSC40753.2019.8980645
M3 - Conference contribution
AN - SCOPUS:85077189715
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2169
EP - 2175
BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 16 June 2019 through 21 June 2019
ER -