Details
Original language | English |
---|---|
Pages (from-to) | 187-189 |
Number of pages | 3 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 6 |
Issue number | 5 |
Publication status | Published - 5 Apr 2012 |
Abstract
We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n-type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) μm and a distance of 8.3 μm. An intrinsic amorphous Si (a-Si)/p +-type a-Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a-Si/n +-type a-Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm 2-sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy-conversion efficiency of the (33 ± 2) μm thick cell is 7.2%. (
Keywords
- Heterojunctions, Kerf-free technologies, Layer transfer, Macroporous silicon, Monocrystalline wafers, Thin films
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi - Rapid Research Letters, Vol. 6, No. 5, 05.04.2012, p. 187-189.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Thin macroporous silicon heterojunction solar cells
AU - Ernst, Marco
AU - Brendel, Rolf
AU - Ferré, Rafel
AU - Harder, Nils Peter
PY - 2012/4/5
Y1 - 2012/4/5
N2 - We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n-type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) μm and a distance of 8.3 μm. An intrinsic amorphous Si (a-Si)/p +-type a-Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a-Si/n +-type a-Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm 2-sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy-conversion efficiency of the (33 ± 2) μm thick cell is 7.2%. (
AB - We demonstrate the processing of a heterojunction solar cell from a purely macroporous silicon (MacPSi) absorber that is generated and separated from a monocrystalline n-type Cz silicon wafer by means of electrochemical etching. The etching procedure results in straight pores with a diameter of (4.7 ± 0.2) μm and a distance of 8.3 μm. An intrinsic amorphous Si (a-Si)/p +-type a-Si/indium tin oxide (ITO) layer stack is on the front side and an intrinsic a-Si/n +-type a-Si/ITO layer stack is on the rear side. The pores are open when depositing the layers onto the 3.92 cm 2-sized cell. The conductive layers do not cause shunting through the pores. A silicon oxide layer passivates the pore walls. The energy-conversion efficiency of the (33 ± 2) μm thick cell is 7.2%. (
KW - Heterojunctions
KW - Kerf-free technologies
KW - Layer transfer
KW - Macroporous silicon
KW - Monocrystalline wafers
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=84860663845&partnerID=8YFLogxK
U2 - 10.1002/pssr.201206113
DO - 10.1002/pssr.201206113
M3 - Article
AN - SCOPUS:84860663845
VL - 6
SP - 187
EP - 189
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 5
ER -