Thin films of CoSi2 on Si1-yCy substrate layers

Research output: Contribution to journal › Conference article › Research › peer review

Authors

  • S. Teichert
  • M. Falke
  • H. Giesler
  • D. K. Sarkar
  • G. Beddies
  • H. J. Hinneberg
  • G. Lippert
  • J. Griesche
  • H. J. Osten

External Research Organisations

  • Chemnitz University of Technology (CUT)
  • Leibniz Institute for High Performance Microelectronics (IHP)
View graph of relations

Details

Original languageEnglish
Pages (from-to)193-197
Number of pages5
JournalMicroelectronic engineering
Volume50
Issue number1-4
Publication statusPublished - Jan 2000
Externally publishedYes
Event1999 3rd Eropean Workshop on Materials for Advanced Metallization (MAM'99) - Ostende, Belgium
Duration: 7 Mar 1999 → 10 Mar 1999

Abstract

The reaction of Co with epitaxial Si1-yCy(001) films is investigated with regard to dependence on annealing temperature and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi2 films grown at 650 °C on Si0.999C0.001 and on Si. Whereas the CoSi2 is fully polycrystalline on Si(001), partially oriented CoSi2 has been observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi2 crystallites has been observed with increasing C concentration.

ASJC Scopus subject areas

Cite this

Thin films of CoSi2 on Si1-yCy substrate layers. / Teichert, S.; Falke, M.; Giesler, H. et al.
In: Microelectronic engineering, Vol. 50, No. 1-4, 01.2000, p. 193-197.

Research output: Contribution to journal › Conference article › Research › peer review

Teichert, S, Falke, M, Giesler, H, Sarkar, DK, Beddies, G, Hinneberg, HJ, Lippert, G, Griesche, J & Osten, HJ 2000, 'Thin films of CoSi2 on Si1-yCy substrate layers', Microelectronic engineering, vol. 50, no. 1-4, pp. 193-197. https://doi.org/10.1016/S0167-9317(99)00282-8
Teichert, S., Falke, M., Giesler, H., Sarkar, D. K., Beddies, G., Hinneberg, H. J., Lippert, G., Griesche, J., & Osten, H. J. (2000). Thin films of CoSi2 on Si1-yCy substrate layers. Microelectronic engineering, 50(1-4), 193-197. https://doi.org/10.1016/S0167-9317(99)00282-8
Teichert S, Falke M, Giesler H, Sarkar DK, Beddies G, Hinneberg HJ et al. Thin films of CoSi2 on Si1-yCy substrate layers. Microelectronic engineering. 2000 Jan;50(1-4):193-197. doi: 10.1016/S0167-9317(99)00282-8
Teichert, S. ; Falke, M. ; Giesler, H. et al. / Thin films of CoSi2 on Si1-yCy substrate layers. In: Microelectronic engineering. 2000 ; Vol. 50, No. 1-4. pp. 193-197.
Download
@article{c6502ef4cb134e19a00f39f0d92c31a8,
title = "Thin films of CoSi2 on Si1-yCy substrate layers",
abstract = "The reaction of Co with epitaxial Si1-yCy(001) films is investigated with regard to dependence on annealing temperature and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi2 films grown at 650 °C on Si0.999C0.001 and on Si. Whereas the CoSi2 is fully polycrystalline on Si(001), partially oriented CoSi2 has been observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi2 crystallites has been observed with increasing C concentration.",
author = "S. Teichert and M. Falke and H. Giesler and Sarkar, {D. K.} and G. Beddies and Hinneberg, {H. J.} and G. Lippert and J. Griesche and Osten, {H. J.}",
year = "2000",
month = jan,
doi = "10.1016/S0167-9317(99)00282-8",
language = "English",
volume = "50",
pages = "193--197",
journal = "Microelectronic engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "1-4",
note = "1999 3rd Eropean Workshop on Materials for Advanced Metallization (MAM'99) ; Conference date: 07-03-1999 Through 10-03-1999",

}

Download

TY - JOUR

T1 - Thin films of CoSi2 on Si1-yCy substrate layers

AU - Teichert, S.

AU - Falke, M.

AU - Giesler, H.

AU - Sarkar, D. K.

AU - Beddies, G.

AU - Hinneberg, H. J.

AU - Lippert, G.

AU - Griesche, J.

AU - Osten, H. J.

PY - 2000/1

Y1 - 2000/1

N2 - The reaction of Co with epitaxial Si1-yCy(001) films is investigated with regard to dependence on annealing temperature and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi2 films grown at 650 °C on Si0.999C0.001 and on Si. Whereas the CoSi2 is fully polycrystalline on Si(001), partially oriented CoSi2 has been observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi2 crystallites has been observed with increasing C concentration.

AB - The reaction of Co with epitaxial Si1-yCy(001) films is investigated with regard to dependence on annealing temperature and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi2 films grown at 650 °C on Si0.999C0.001 and on Si. Whereas the CoSi2 is fully polycrystalline on Si(001), partially oriented CoSi2 has been observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi2 crystallites has been observed with increasing C concentration.

UR - http://www.scopus.com/inward/record.url?scp=0033640087&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(99)00282-8

DO - 10.1016/S0167-9317(99)00282-8

M3 - Conference article

AN - SCOPUS:0033640087

VL - 50

SP - 193

EP - 197

JO - Microelectronic engineering

JF - Microelectronic engineering

SN - 0167-9317

IS - 1-4

T2 - 1999 3rd Eropean Workshop on Materials for Advanced Metallization (MAM'99)

Y2 - 7 March 1999 through 10 March 1999

ER -