Details
| Original language | English |
|---|---|
| Article number | 035029 |
| Journal | 2D Materials |
| Volume | 8 |
| Issue number | 3 |
| Early online date | 3 May 2021 |
| Publication status | Published - Jul 2021 |
Abstract
Hafnium pentatelluride (Hf Te5) is a layered two-dimensional material with various exotic properties. It is thought to be a topological insulator. Whereas bulk Hf Te5 has a small band gap, single layers are predicted to be a quantum spin hall insulator with a large band gap. Here we measured band gap energies for samples with varying thicknesses and found a clear increase of gap energies for the thinner samples. With decreasing thickness an increase of the measured band gap energies from 40 to 304 meV is observed.
Keywords
- Eletrical transport, Gap energies, Thin layers, Transition metal chalcogenide
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: 2D Materials, Vol. 8, No. 3, 035029, 07.2021.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Thickness-dependent gap energies in thin layers of Hf Te5
AU - Belke, C.
AU - Locmelis, S.
AU - Thole, L.
AU - Schmidt, H.
AU - Behrens, P.
AU - Haug, R. J.
PY - 2021/7
Y1 - 2021/7
N2 - Hafnium pentatelluride (Hf Te5) is a layered two-dimensional material with various exotic properties. It is thought to be a topological insulator. Whereas bulk Hf Te5 has a small band gap, single layers are predicted to be a quantum spin hall insulator with a large band gap. Here we measured band gap energies for samples with varying thicknesses and found a clear increase of gap energies for the thinner samples. With decreasing thickness an increase of the measured band gap energies from 40 to 304 meV is observed.
AB - Hafnium pentatelluride (Hf Te5) is a layered two-dimensional material with various exotic properties. It is thought to be a topological insulator. Whereas bulk Hf Te5 has a small band gap, single layers are predicted to be a quantum spin hall insulator with a large band gap. Here we measured band gap energies for samples with varying thicknesses and found a clear increase of gap energies for the thinner samples. With decreasing thickness an increase of the measured band gap energies from 40 to 304 meV is observed.
KW - Eletrical transport
KW - Gap energies
KW - Thin layers
KW - Transition metal chalcogenide
UR - http://www.scopus.com/inward/record.url?scp=85105546507&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/abf98b
DO - 10.1088/2053-1583/abf98b
M3 - Article
AN - SCOPUS:85105546507
VL - 8
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 3
M1 - 035029
ER -