Details
Original language | English |
---|---|
Title of host publication | 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1-4 |
Number of pages | 4 |
ISBN (electronic) | 9781538623596 |
Publication status | Published - 30 May 2018 |
Event | 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018 - Toulouse, France Duration: 15 Apr 2018 → 18 Apr 2018 |
Abstract
The layout and design of the on-chip metallization can influence the reliability of products. Thick wide metal tracks are sensitive for failure mechanisms like electromigration (EM), cracking and delamination. The thermal expansion and the volume increase due to mass transport can also influence neighbor interconnects or devices. Process, stack and geometry changes are realized to improve the quality of thick metals. But for some of these changes interactions of different effects can occur. Simulation investigations reveal a side effect of a thick metal stack change. The use of multiple liner layers in a wide thick metal track changes the mechanical properties and the EM performance decreases. The so called highly robust (HiRo) metallization shows typically a significant better EM performance and favorable mechanical properties. The paper presents simulation investigations on HiRo thick metal tracks with multiple liners. The sandwich stack shows also an increase in the EM mass flux. The mechanical properties are also affected but the influence on the mechanical performance will be not significant.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Chemical Engineering(all)
- Fluid Flow and Transfer Processes
- Engineering(all)
- Electrical and Electronic Engineering
- Engineering(all)
- Safety, Risk, Reliability and Quality
- Mathematics(all)
- Modelling and Simulation
- Engineering(all)
- Mechanical Engineering
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2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Thick AlCu-metal reliability characterization
AU - Weide-Zaage, Kirsten
AU - Tan, Yuqi
AU - Hein, Verena
N1 - Publisher Copyright: © 2018 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/5/30
Y1 - 2018/5/30
N2 - The layout and design of the on-chip metallization can influence the reliability of products. Thick wide metal tracks are sensitive for failure mechanisms like electromigration (EM), cracking and delamination. The thermal expansion and the volume increase due to mass transport can also influence neighbor interconnects or devices. Process, stack and geometry changes are realized to improve the quality of thick metals. But for some of these changes interactions of different effects can occur. Simulation investigations reveal a side effect of a thick metal stack change. The use of multiple liner layers in a wide thick metal track changes the mechanical properties and the EM performance decreases. The so called highly robust (HiRo) metallization shows typically a significant better EM performance and favorable mechanical properties. The paper presents simulation investigations on HiRo thick metal tracks with multiple liners. The sandwich stack shows also an increase in the EM mass flux. The mechanical properties are also affected but the influence on the mechanical performance will be not significant.
AB - The layout and design of the on-chip metallization can influence the reliability of products. Thick wide metal tracks are sensitive for failure mechanisms like electromigration (EM), cracking and delamination. The thermal expansion and the volume increase due to mass transport can also influence neighbor interconnects or devices. Process, stack and geometry changes are realized to improve the quality of thick metals. But for some of these changes interactions of different effects can occur. Simulation investigations reveal a side effect of a thick metal stack change. The use of multiple liner layers in a wide thick metal track changes the mechanical properties and the EM performance decreases. The so called highly robust (HiRo) metallization shows typically a significant better EM performance and favorable mechanical properties. The paper presents simulation investigations on HiRo thick metal tracks with multiple liners. The sandwich stack shows also an increase in the EM mass flux. The mechanical properties are also affected but the influence on the mechanical performance will be not significant.
UR - http://www.scopus.com/inward/record.url?scp=85048871919&partnerID=8YFLogxK
U2 - 10.1109/eurosime.2018.8369904
DO - 10.1109/eurosime.2018.8369904
M3 - Conference contribution
AN - SCOPUS:85048871919
SP - 1
EP - 4
BT - 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018
Y2 - 15 April 2018 through 18 April 2018
ER -