Details
| Original language | English |
|---|---|
| Pages (from-to) | 40826-40834 |
| Number of pages | 9 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 11 |
| Issue number | 43 |
| Publication status | Published - 2019 |
| Externally published | Yes |
Abstract
The growth of >100-μm-thick diamond layers adherent on aluminum nitride with low thermal boundary resistance between diamond and AlN is presented in this work. The thermal barrier resistance was found to be in the range of 16 m 2·K/GW, which is a large improvement on the current state-of-the-art. While thick films failed to adhere on untreated AlN films, AlN films treated with hydrogen/nitrogen plasma retained the thick diamond layers. Clear differences in ζ-potential measurement confirm surface modification due to hydrogen/nitrogen plasma treatment. An increase in non-diamond carbon in the initial layers of diamond grown on pretreated AlN is seen by Raman spectroscopy. The presence of non-diamond carbon has minimal effect on the thermal barrier resistance. The surfaces studied with X-ray photoelectron spectroscopy revealed a clear distinction between pretreated and untreated samples. The surface aluminum goes from a nitrogen-rich environment to an oxygen-rich environment after pretreatment. A clean interface between diamond and AlN is seen by cross-sectional transmission electron microscopy.
Keywords
- aluminum nitride, diamond, diamond growth, diamond seeding, thermal barrier resistance
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
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In: ACS Applied Materials and Interfaces, Vol. 11, No. 43, 2019, p. 40826-40834.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance
AU - Mandal, Soumen
AU - Yuan, C.
AU - Massabuau, F.
AU - Pomeroy, J.W.
AU - Cuenca, J.
AU - Bland, H.
AU - Thomas, E.
AU - Wallis, D.
AU - Batten, T.
AU - Morgan, D.
AU - Oliver, R.
AU - Kuball, M.
AU - Williams, O.A.
N1 - Publisher Copyright: Copyright © 2019 American Chemical Society.
PY - 2019
Y1 - 2019
N2 - The growth of >100-μm-thick diamond layers adherent on aluminum nitride with low thermal boundary resistance between diamond and AlN is presented in this work. The thermal barrier resistance was found to be in the range of 16 m 2·K/GW, which is a large improvement on the current state-of-the-art. While thick films failed to adhere on untreated AlN films, AlN films treated with hydrogen/nitrogen plasma retained the thick diamond layers. Clear differences in ζ-potential measurement confirm surface modification due to hydrogen/nitrogen plasma treatment. An increase in non-diamond carbon in the initial layers of diamond grown on pretreated AlN is seen by Raman spectroscopy. The presence of non-diamond carbon has minimal effect on the thermal barrier resistance. The surfaces studied with X-ray photoelectron spectroscopy revealed a clear distinction between pretreated and untreated samples. The surface aluminum goes from a nitrogen-rich environment to an oxygen-rich environment after pretreatment. A clean interface between diamond and AlN is seen by cross-sectional transmission electron microscopy.
AB - The growth of >100-μm-thick diamond layers adherent on aluminum nitride with low thermal boundary resistance between diamond and AlN is presented in this work. The thermal barrier resistance was found to be in the range of 16 m 2·K/GW, which is a large improvement on the current state-of-the-art. While thick films failed to adhere on untreated AlN films, AlN films treated with hydrogen/nitrogen plasma retained the thick diamond layers. Clear differences in ζ-potential measurement confirm surface modification due to hydrogen/nitrogen plasma treatment. An increase in non-diamond carbon in the initial layers of diamond grown on pretreated AlN is seen by Raman spectroscopy. The presence of non-diamond carbon has minimal effect on the thermal barrier resistance. The surfaces studied with X-ray photoelectron spectroscopy revealed a clear distinction between pretreated and untreated samples. The surface aluminum goes from a nitrogen-rich environment to an oxygen-rich environment after pretreatment. A clean interface between diamond and AlN is seen by cross-sectional transmission electron microscopy.
KW - aluminum nitride
KW - diamond
KW - diamond growth
KW - diamond seeding
KW - thermal barrier resistance
UR - http://www.scopus.com/inward/record.url?scp=85074189780&partnerID=8YFLogxK
U2 - 10.1021/acsami.9b13869
DO - 10.1021/acsami.9b13869
M3 - Article
VL - 11
SP - 40826
EP - 40834
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
SN - 1944-8244
IS - 43
ER -