Thermal-electric-mechanical simulation of a multilevel metallization system

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Original languageEnglish
Title of host publication2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (electronic)9781509021062
Publication statusPublished - 29 Apr 2016
Event17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016 - Montpellier, France
Duration: 18 Apr 201620 Apr 2016

Abstract

In modern metallization systems mechanical stress due to CTE mismatch is one of the reliability problems. With the help of finite element simulations the thermal-electrical-mechanical behavior can be calculated. The use of a reference temperature for the stress free state in the simulations is insufficient to determine the stress field in the metallization. The intrinsic stress resulting from the processing is hereby not considered. The simulation of the process steps by the birth and die capability of ANSYS is time consuming and complex. A possibility to consider the intrinsic stress in the metallization system is the use of averaged CTEs from measurements of a multi-level stack depending on the horizontal running direction of the interconnect in the x- or y-direction, or in from literature. The values were taken for a comparison between calculated stress field of the stacked metallization system with process steps and the reference temperature for the stress free state. The achieved simulation results help for a better understanding of the stress behavior.

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Thermal-electric-mechanical simulation of a multilevel metallization system. / Liu, Yanpeng; Weide-Zaage, Kirsten.
2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7463354.

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Liu, Y & Weide-Zaage, K 2016, Thermal-electric-mechanical simulation of a multilevel metallization system. in 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016., 7463354, Institute of Electrical and Electronics Engineers Inc., 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016, Montpellier, France, 18 Apr 2016. https://doi.org/10.1109/eurosime.2016.7463354
Liu, Y., & Weide-Zaage, K. (2016). Thermal-electric-mechanical simulation of a multilevel metallization system. In 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016 Article 7463354 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/eurosime.2016.7463354
Liu Y, Weide-Zaage K. Thermal-electric-mechanical simulation of a multilevel metallization system. In 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7463354 doi: 10.1109/eurosime.2016.7463354
Liu, Yanpeng ; Weide-Zaage, Kirsten. / Thermal-electric-mechanical simulation of a multilevel metallization system. 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016. Institute of Electrical and Electronics Engineers Inc., 2016.
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abstract = "In modern metallization systems mechanical stress due to CTE mismatch is one of the reliability problems. With the help of finite element simulations the thermal-electrical-mechanical behavior can be calculated. The use of a reference temperature for the stress free state in the simulations is insufficient to determine the stress field in the metallization. The intrinsic stress resulting from the processing is hereby not considered. The simulation of the process steps by the birth and die capability of ANSYS is time consuming and complex. A possibility to consider the intrinsic stress in the metallization system is the use of averaged CTEs from measurements of a multi-level stack depending on the horizontal running direction of the interconnect in the x- or y-direction, or in from literature. The values were taken for a comparison between calculated stress field of the stacked metallization system with process steps and the reference temperature for the stress free state. The achieved simulation results help for a better understanding of the stress behavior.",
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AU - Liu, Yanpeng

AU - Weide-Zaage, Kirsten

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