Details
| Original language | English |
|---|---|
| Title of host publication | Gettering and Defect Engineering in Semiconductor Technology XIV, GADEST2011 |
| Pages | 139-146 |
| Number of pages | 8 |
| Publication status | Published - 2011 |
| Externally published | Yes |
| Event | 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 - Loipersdorf, Austria Duration: 25 Sept 2011 → 30 Sept 2011 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Volume | 178-179 |
| ISSN (Print) | 1012-0394 |
Abstract
Illumination-induced degradation of minority carrier lifetime was studied in n-type Czochralski silicon co-doped with phosphorus and boron. The recombination centre that emerges is found to be identical to the fast-stage centre (FRC) known for p-Si where it is produced at a rate proportional to the squared hole concentration, p2. Since holes in n-Si are excess carriers of a relatively low concentration, the time scale of FRC generation in n-Si is increased by several orders of magnitude. The generation kinetics is non-linear, due to the dependence of p on the concentration of FRC and this non-linearity is well reproduced by simulations. The injection level dependence of the lifetime shows that FRC exists in 3 charge states (-1, 0, +1) possessing 2 energy levels. The recombination is controlled by both levels. The proper identification of FRC is a BsO2 complex of a substitutional boron and an oxygen dimer. The nature of the major lifetime-degrading centre in n-Si is thus different from that in p-Si - where the dominant one (a slow-stage centre, SRC) was found to be BiO 2 - a complex involving an interstitial boron.
Keywords
- Boron, Lifetime degradation, Oxygen, Silicon
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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Gettering and Defect Engineering in Semiconductor Technology XIV, GADEST2011. 2011. p. 139-146 (Solid State Phenomena; Vol. 178-179).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - The nature of lifetime-degrading boron-oxygen centres revealed by comparison of p-type and n-type silicon
AU - Voronkov, V. V.
AU - Falster, R.
AU - Bothe, K.
AU - Lim, B.
AU - Schmidt, J.
PY - 2011
Y1 - 2011
N2 - Illumination-induced degradation of minority carrier lifetime was studied in n-type Czochralski silicon co-doped with phosphorus and boron. The recombination centre that emerges is found to be identical to the fast-stage centre (FRC) known for p-Si where it is produced at a rate proportional to the squared hole concentration, p2. Since holes in n-Si are excess carriers of a relatively low concentration, the time scale of FRC generation in n-Si is increased by several orders of magnitude. The generation kinetics is non-linear, due to the dependence of p on the concentration of FRC and this non-linearity is well reproduced by simulations. The injection level dependence of the lifetime shows that FRC exists in 3 charge states (-1, 0, +1) possessing 2 energy levels. The recombination is controlled by both levels. The proper identification of FRC is a BsO2 complex of a substitutional boron and an oxygen dimer. The nature of the major lifetime-degrading centre in n-Si is thus different from that in p-Si - where the dominant one (a slow-stage centre, SRC) was found to be BiO 2 - a complex involving an interstitial boron.
AB - Illumination-induced degradation of minority carrier lifetime was studied in n-type Czochralski silicon co-doped with phosphorus and boron. The recombination centre that emerges is found to be identical to the fast-stage centre (FRC) known for p-Si where it is produced at a rate proportional to the squared hole concentration, p2. Since holes in n-Si are excess carriers of a relatively low concentration, the time scale of FRC generation in n-Si is increased by several orders of magnitude. The generation kinetics is non-linear, due to the dependence of p on the concentration of FRC and this non-linearity is well reproduced by simulations. The injection level dependence of the lifetime shows that FRC exists in 3 charge states (-1, 0, +1) possessing 2 energy levels. The recombination is controlled by both levels. The proper identification of FRC is a BsO2 complex of a substitutional boron and an oxygen dimer. The nature of the major lifetime-degrading centre in n-Si is thus different from that in p-Si - where the dominant one (a slow-stage centre, SRC) was found to be BiO 2 - a complex involving an interstitial boron.
KW - Boron
KW - Lifetime degradation
KW - Oxygen
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=80053223798&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.178-179.139
DO - 10.4028/www.scientific.net/SSP.178-179.139
M3 - Conference contribution
AN - SCOPUS:80053223798
SN - 9783037852323
T3 - Solid State Phenomena
SP - 139
EP - 146
BT - Gettering and Defect Engineering in Semiconductor Technology XIV, GADEST2011
T2 - 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011
Y2 - 25 September 2011 through 30 September 2011
ER -