Details
| Original language | English |
|---|---|
| Pages (from-to) | 508-515 |
| Number of pages | 8 |
| Journal | Journal of crystal growth |
| Volume | 167 |
| Issue number | 3-4 |
| Publication status | Published - Oct 1996 |
| Externally published | Yes |
Abstract
We report on molecular beam epitaxial growth of nanometer structures using shadow masks deposited directly onto the substrate. A preparation method for these masks with dimensions of only few 10 nm based on optical lithography is shown using a spacer technology. Si/Si0.8Ge0.2/Si quantum well wires (QWRs) smaller than 100 nm were grown. The obtained wire shapes are investigated by scanning and transmission electron microscopy as a function of shadow mask design and evaporation source geometry. Both the mask geometry and the surface diffusion of adatoms have to be considered for predicting wire shapes. From an analysis of different grown wires it becomes evident that the geometries of the mask and deposition system play the most important role in deciding the shape of QWRs. At high growth temperatures an enhanced surface diffusion causes a modulation of the Ge content and lowers the thickness of the SiGe quantum well. For the growth at lower temperatures, the relation between mask geometry and wire shape can be treated with purely geometrical arguments.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 167, No. 3-4, 10.1996, p. 508-515.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - The growth of nanometer Si/SiGe/Si quantum well wires with local molecular beam epitaxy in dependence on the shadow mask geometry
AU - Kim, Myeongcheol
AU - Osten, H. J.
AU - Wolff, A.
AU - Quick, C.
AU - Zeindl, H. P.
AU - Klatt, J.
AU - Knoll, D.
PY - 1996/10
Y1 - 1996/10
N2 - We report on molecular beam epitaxial growth of nanometer structures using shadow masks deposited directly onto the substrate. A preparation method for these masks with dimensions of only few 10 nm based on optical lithography is shown using a spacer technology. Si/Si0.8Ge0.2/Si quantum well wires (QWRs) smaller than 100 nm were grown. The obtained wire shapes are investigated by scanning and transmission electron microscopy as a function of shadow mask design and evaporation source geometry. Both the mask geometry and the surface diffusion of adatoms have to be considered for predicting wire shapes. From an analysis of different grown wires it becomes evident that the geometries of the mask and deposition system play the most important role in deciding the shape of QWRs. At high growth temperatures an enhanced surface diffusion causes a modulation of the Ge content and lowers the thickness of the SiGe quantum well. For the growth at lower temperatures, the relation between mask geometry and wire shape can be treated with purely geometrical arguments.
AB - We report on molecular beam epitaxial growth of nanometer structures using shadow masks deposited directly onto the substrate. A preparation method for these masks with dimensions of only few 10 nm based on optical lithography is shown using a spacer technology. Si/Si0.8Ge0.2/Si quantum well wires (QWRs) smaller than 100 nm were grown. The obtained wire shapes are investigated by scanning and transmission electron microscopy as a function of shadow mask design and evaporation source geometry. Both the mask geometry and the surface diffusion of adatoms have to be considered for predicting wire shapes. From an analysis of different grown wires it becomes evident that the geometries of the mask and deposition system play the most important role in deciding the shape of QWRs. At high growth temperatures an enhanced surface diffusion causes a modulation of the Ge content and lowers the thickness of the SiGe quantum well. For the growth at lower temperatures, the relation between mask geometry and wire shape can be treated with purely geometrical arguments.
UR - http://www.scopus.com/inward/record.url?scp=0030259143&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(96)00255-2
DO - 10.1016/0022-0248(96)00255-2
M3 - Article
AN - SCOPUS:0030259143
VL - 167
SP - 508
EP - 515
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 3-4
ER -