Details
Original language | English |
---|---|
Article number | 108033 |
Journal | International Communications in Heat and Mass Transfer |
Volume | 159 |
Early online date | 17 Sept 2024 |
Publication status | Published - Dec 2024 |
Abstract
To achieve high-density, high-reliability integrated packaging interconnects, 3D packaging technology has become a focus of current research, where Through-Silicon Via (TSV) and Through-Glass Via (TGV) technologies are key interconnect technologies. However, in TSV and TGV structures, the mismatch in thermal expansion coefficients among various materials and the complexity of the interconnect structures can lead to significant thermal stress during production and use, severely affecting device performance and reliability. In this study, a thermomechanically coupled phase-field model that considers mixed-mode fracture is proposed to study the mechanical performance and fracture behavior of interconnect structures. The approach to studying coupled thermo-mechanical-damage models can indeed be divided into two parts, focusing first on microstructure generation using Voronoi polygons and second on conducting phase field simulations to analyze mechanical and fracture behaviors. The framework was applied to model the fracture of interconnect structures under thermal cyclic conditions, demonstrating the formation of distinctive crack patterns and complex crack networks. The cracking behaviors observed in the experiments and simulations are remarkably similar to each other. This research provides an efficient and reliable simulation method for enhancing the reliability of interconnect structures in 3D packaging technology.
Keywords
- Crack initiation and propagation, Electronic packaging interconnect structures, Phase-field model, Thermomechanical coupling problems
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Chemical Engineering(all)
- General Chemical Engineering
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: International Communications in Heat and Mass Transfer, Vol. 159, 108033, 12.2024.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - The application of thermomechanically coupled phase-field models in electronic packaging interconnect structures
AU - Gong, Yanpeng
AU - Kou, Yuguo
AU - Yue, Qiang
AU - Zhuang, Xiaoying
AU - Qin, Fei
AU - Wang, Qiao
AU - Rabczuk, Timon
N1 - Publisher Copyright: © 2024 Elsevier Ltd
PY - 2024/12
Y1 - 2024/12
N2 - To achieve high-density, high-reliability integrated packaging interconnects, 3D packaging technology has become a focus of current research, where Through-Silicon Via (TSV) and Through-Glass Via (TGV) technologies are key interconnect technologies. However, in TSV and TGV structures, the mismatch in thermal expansion coefficients among various materials and the complexity of the interconnect structures can lead to significant thermal stress during production and use, severely affecting device performance and reliability. In this study, a thermomechanically coupled phase-field model that considers mixed-mode fracture is proposed to study the mechanical performance and fracture behavior of interconnect structures. The approach to studying coupled thermo-mechanical-damage models can indeed be divided into two parts, focusing first on microstructure generation using Voronoi polygons and second on conducting phase field simulations to analyze mechanical and fracture behaviors. The framework was applied to model the fracture of interconnect structures under thermal cyclic conditions, demonstrating the formation of distinctive crack patterns and complex crack networks. The cracking behaviors observed in the experiments and simulations are remarkably similar to each other. This research provides an efficient and reliable simulation method for enhancing the reliability of interconnect structures in 3D packaging technology.
AB - To achieve high-density, high-reliability integrated packaging interconnects, 3D packaging technology has become a focus of current research, where Through-Silicon Via (TSV) and Through-Glass Via (TGV) technologies are key interconnect technologies. However, in TSV and TGV structures, the mismatch in thermal expansion coefficients among various materials and the complexity of the interconnect structures can lead to significant thermal stress during production and use, severely affecting device performance and reliability. In this study, a thermomechanically coupled phase-field model that considers mixed-mode fracture is proposed to study the mechanical performance and fracture behavior of interconnect structures. The approach to studying coupled thermo-mechanical-damage models can indeed be divided into two parts, focusing first on microstructure generation using Voronoi polygons and second on conducting phase field simulations to analyze mechanical and fracture behaviors. The framework was applied to model the fracture of interconnect structures under thermal cyclic conditions, demonstrating the formation of distinctive crack patterns and complex crack networks. The cracking behaviors observed in the experiments and simulations are remarkably similar to each other. This research provides an efficient and reliable simulation method for enhancing the reliability of interconnect structures in 3D packaging technology.
KW - Crack initiation and propagation
KW - Electronic packaging interconnect structures
KW - Phase-field model
KW - Thermomechanical coupling problems
UR - http://www.scopus.com/inward/record.url?scp=85203877472&partnerID=8YFLogxK
U2 - 10.1016/j.icheatmasstransfer.2024.108033
DO - 10.1016/j.icheatmasstransfer.2024.108033
M3 - Article
AN - SCOPUS:85203877472
VL - 159
JO - International Communications in Heat and Mass Transfer
JF - International Communications in Heat and Mass Transfer
SN - 0735-1933
M1 - 108033
ER -