Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices

Research output: Contribution to journalArticleResearchpeer review

Authors

  • M. Salman
  • F. Gouider
  • H. Schmidt
  • Yu B. Vasilyev
  • R. J. Haug
  • G. Nachtwei

Research Organisations

External Research Organisations

  • NTH Nano School for Contacts in Nanosystems
  • Technische Universität Braunschweig
  • RAS - Ioffe Physico Technical Institute
View graph of relations

Details

Original languageEnglish
Pages (from-to)1208-1210
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number4
Publication statusPublished - 1 Apr 2011

Abstract

In this study, the influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the LLs such as L1, L2 and L3, fit quite well to the terahertz spectral range. The scattering rate of the spectral lines of LLs is taken into account. Based on a theoretical analysis we argue that the fingerprints of the THz radiation in single-layer graphene can be improved to be observed at low magnetic fields.

Keywords

    Graphene, Landau levels, Photoresponse, Terahertz

ASJC Scopus subject areas

Cite this

Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices. / Salman, M.; Gouider, F.; Schmidt, H. et al.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, No. 4, 01.04.2011, p. 1208-1210.

Research output: Contribution to journalArticleResearchpeer review

Salman, M, Gouider, F, Schmidt, H, Vasilyev, YB, Haug, RJ & Nachtwei, G 2011, 'Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 8, no. 4, pp. 1208-1210. https://doi.org/10.1002/pssc.201000827
Salman, M., Gouider, F., Schmidt, H., Vasilyev, Y. B., Haug, R. J., & Nachtwei, G. (2011). Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(4), 1208-1210. https://doi.org/10.1002/pssc.201000827
Salman M, Gouider F, Schmidt H, Vasilyev YB, Haug RJ, Nachtwei G. Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices. Physica Status Solidi (C) Current Topics in Solid State Physics. 2011 Apr 1;8(4):1208-1210. doi: 10.1002/pssc.201000827
Salman, M. ; Gouider, F. ; Schmidt, H. et al. / Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2011 ; Vol. 8, No. 4. pp. 1208-1210.
Download
@article{b120a87c4cc64f72a382d4b2fcb7b44d,
title = "Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices",
abstract = "In this study, the influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the LLs such as L1, L2 and L3, fit quite well to the terahertz spectral range. The scattering rate of the spectral lines of LLs is taken into account. Based on a theoretical analysis we argue that the fingerprints of the THz radiation in single-layer graphene can be improved to be observed at low magnetic fields.",
keywords = "Graphene, Landau levels, Photoresponse, Terahertz",
author = "M. Salman and F. Gouider and H. Schmidt and Vasilyev, {Yu B.} and Haug, {R. J.} and G. Nachtwei",
year = "2011",
month = apr,
day = "1",
doi = "10.1002/pssc.201000827",
language = "English",
volume = "8",
pages = "1208--1210",
number = "4",

}

Download

TY - JOUR

T1 - Terahertz photoresponse dependence on magnetic and electric fields in graphene-based devices

AU - Salman, M.

AU - Gouider, F.

AU - Schmidt, H.

AU - Vasilyev, Yu B.

AU - Haug, R. J.

AU - Nachtwei, G.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - In this study, the influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the LLs such as L1, L2 and L3, fit quite well to the terahertz spectral range. The scattering rate of the spectral lines of LLs is taken into account. Based on a theoretical analysis we argue that the fingerprints of the THz radiation in single-layer graphene can be improved to be observed at low magnetic fields.

AB - In this study, the influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the LLs such as L1, L2 and L3, fit quite well to the terahertz spectral range. The scattering rate of the spectral lines of LLs is taken into account. Based on a theoretical analysis we argue that the fingerprints of the THz radiation in single-layer graphene can be improved to be observed at low magnetic fields.

KW - Graphene

KW - Landau levels

KW - Photoresponse

KW - Terahertz

UR - http://www.scopus.com/inward/record.url?scp=79953740467&partnerID=8YFLogxK

U2 - 10.1002/pssc.201000827

DO - 10.1002/pssc.201000827

M3 - Article

AN - SCOPUS:79953740467

VL - 8

SP - 1208

EP - 1210

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 4

ER -

By the same author(s)