Details
| Original language | English |
|---|---|
| Article number | 195202 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 77 |
| Issue number | 19 |
| Publication status | Published - 6 May 2008 |
Abstract
We discuss the optical injection of magnetization into a nonmagnetic semiconductor by the absorption of circularly polarized light. A microscopic approach, which is based on Fermi's golden rule and k p band models, is used to quantify the magnetization-injection rate in GaAs. We find that under conditions typical in optical orientation experiments, the magnetization-injection rate of holes is approximately 20 times larger than it is for electrons, reflecting the large hole magnetic moment. We then turn to the ultrafast excitation regime and explore the possibility that the injected magnetization can radiate a detectable terahertz field. By using a phenomenological approach for the magnetization relaxation dynamics, we predict that the terahertz field from magnetic injection is at the limit of current terahertz detection technology. We provide initial experimental measurements in search of this terahertz radiation.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 77, No. 19, 195202, 06.05.2008.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Terahertz emission from ultrafast optical orientation of spins in semiconductors
T2 - Experiment and theory
AU - Nastos, F.
AU - Newson, R. W.
AU - Hübner, J.
AU - Van Driel, H. M.
AU - Sipe, J. E.
PY - 2008/5/6
Y1 - 2008/5/6
N2 - We discuss the optical injection of magnetization into a nonmagnetic semiconductor by the absorption of circularly polarized light. A microscopic approach, which is based on Fermi's golden rule and k p band models, is used to quantify the magnetization-injection rate in GaAs. We find that under conditions typical in optical orientation experiments, the magnetization-injection rate of holes is approximately 20 times larger than it is for electrons, reflecting the large hole magnetic moment. We then turn to the ultrafast excitation regime and explore the possibility that the injected magnetization can radiate a detectable terahertz field. By using a phenomenological approach for the magnetization relaxation dynamics, we predict that the terahertz field from magnetic injection is at the limit of current terahertz detection technology. We provide initial experimental measurements in search of this terahertz radiation.
AB - We discuss the optical injection of magnetization into a nonmagnetic semiconductor by the absorption of circularly polarized light. A microscopic approach, which is based on Fermi's golden rule and k p band models, is used to quantify the magnetization-injection rate in GaAs. We find that under conditions typical in optical orientation experiments, the magnetization-injection rate of holes is approximately 20 times larger than it is for electrons, reflecting the large hole magnetic moment. We then turn to the ultrafast excitation regime and explore the possibility that the injected magnetization can radiate a detectable terahertz field. By using a phenomenological approach for the magnetization relaxation dynamics, we predict that the terahertz field from magnetic injection is at the limit of current terahertz detection technology. We provide initial experimental measurements in search of this terahertz radiation.
UR - http://www.scopus.com/inward/record.url?scp=43449138811&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.77.195202
DO - 10.1103/PhysRevB.77.195202
M3 - Article
AN - SCOPUS:43449138811
VL - 77
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 19
M1 - 195202
ER -