Temperature-driven refacetting phase transition in Pb chains on Si(557)

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Original languageEnglish
Article number174108
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number17
Publication statusPublished - 13 May 2008

Abstract

By using quantitative low energy electron diffraction, we have studied the temperature-driven phase transition of Pb chains grown on Si(557) substrates at a surface concentration of 1.3 ML. This concentration, which is still below one physical monolayer, exhibits a unique switching of electrical conductance from one dimensional to two dimensional above 78 K, which is coupled to this phase transition, and was investigated for this reason. Annealing to 640 K causes a concentration-driven refacetting of the whole surface into large (223) facets at low temperatures, while along the chains a so-called (1,5) linear phase is formed, causing a tenfold periodicity. At Tc =78 K, we analyze a temperature-driven order-order transition along the [1̄ 1̄ 2] direction in detail, which again turns out to be a refacetting transition. The two-dimensional character of this transition was seen by corresponding structural changes along the [1 1̄ 0] direction as well. Refacetting causes a change in periodicity and destroys the conditions of Fermi nesting necessary for one-dimensional conductance.

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Temperature-driven refacetting phase transition in Pb chains on Si(557). / Czubanowski, Marcin; Schuster, A.; Pfnür, Herbert et al.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 77, No. 17, 174108, 13.05.2008.

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Czubanowski M, Schuster A, Pfnür H, Tegenkamp C. Temperature-driven refacetting phase transition in Pb chains on Si(557). Physical Review B - Condensed Matter and Materials Physics. 2008 May 13;77(17):174108. doi: 10.1103/PhysRevB.77.174108
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AU - Czubanowski, Marcin

AU - Schuster, A.

AU - Pfnür, Herbert

AU - Tegenkamp, Christoph

PY - 2008/5/13

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