Temperature-Dependent Magnetoresistance of Single-Layer Graphene

Research output: Contribution to journalArticleResearchpeer review

Authors

  • G. Yu. Vasileva
  • P. S. Alekseev
  • Yu. B. Vasil’ev
  • A. P. Dmitriev
  • V. Yu. Kachorovskii
  • D. Smirnov
  • H. Schmidt
  • R. Haug

Research Organisations

External Research Organisations

  • RAS - Ioffe Physico Technical Institute
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Details

Original languageEnglish
Pages (from-to)438-443
Number of pages6
JournalJournal of Experimental and Theoretical Physics
Volume129
Issue number3
Publication statusPublished - Sept 2019

Abstract

Abstract: The magnetoresistances of single-layer graphene samples with various types of scattering impurities are measured over wide temperature and magnetic field ranges. The magnetoresistance of samples with a short-range potential is shown to be proportional to the square root of the magnetic field except for the cases of relatively low concentrations, where the magnetoresistance is linear. The square-root temperature dependence of the magnetoresistance is analyzed and good agreement with theoretical calculations is obtained. These results indicate that the square-root magnetoresistance in low magnetic fields can be considered as a characteristic feature of single-layer graphene with a short-range disorder.

ASJC Scopus subject areas

Cite this

Temperature-Dependent Magnetoresistance of Single-Layer Graphene. / Vasileva, G. Yu.; Alekseev, P. S.; Vasil’ev, Yu. B. et al.
In: Journal of Experimental and Theoretical Physics, Vol. 129, No. 3, 09.2019, p. 438-443.

Research output: Contribution to journalArticleResearchpeer review

Vasileva, GY, Alekseev, PS, Vasil’ev, YB, Dmitriev, AP, Kachorovskii, VY, Smirnov, D, Schmidt, H & Haug, R 2019, 'Temperature-Dependent Magnetoresistance of Single-Layer Graphene', Journal of Experimental and Theoretical Physics, vol. 129, no. 3, pp. 438-443. https://doi.org/10.1134/S1063776119080156
Vasileva, G. Y., Alekseev, P. S., Vasil’ev, Y. B., Dmitriev, A. P., Kachorovskii, V. Y., Smirnov, D., Schmidt, H., & Haug, R. (2019). Temperature-Dependent Magnetoresistance of Single-Layer Graphene. Journal of Experimental and Theoretical Physics, 129(3), 438-443. https://doi.org/10.1134/S1063776119080156
Vasileva GY, Alekseev PS, Vasil’ev YB, Dmitriev AP, Kachorovskii VY, Smirnov D et al. Temperature-Dependent Magnetoresistance of Single-Layer Graphene. Journal of Experimental and Theoretical Physics. 2019 Sept;129(3):438-443. doi: 10.1134/S1063776119080156
Vasileva, G. Yu. ; Alekseev, P. S. ; Vasil’ev, Yu. B. et al. / Temperature-Dependent Magnetoresistance of Single-Layer Graphene. In: Journal of Experimental and Theoretical Physics. 2019 ; Vol. 129, No. 3. pp. 438-443.
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abstract = "Abstract: The magnetoresistances of single-layer graphene samples with various types of scattering impurities are measured over wide temperature and magnetic field ranges. The magnetoresistance of samples with a short-range potential is shown to be proportional to the square root of the magnetic field except for the cases of relatively low concentrations, where the magnetoresistance is linear. The square-root temperature dependence of the magnetoresistance is analyzed and good agreement with theoretical calculations is obtained. These results indicate that the square-root magnetoresistance in low magnetic fields can be considered as a characteristic feature of single-layer graphene with a short-range disorder.",
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T1 - Temperature-Dependent Magnetoresistance of Single-Layer Graphene

AU - Vasileva, G. Yu.

AU - Alekseev, P. S.

AU - Vasil’ev, Yu. B.

AU - Dmitriev, A. P.

AU - Kachorovskii, V. Yu.

AU - Smirnov, D.

AU - Schmidt, H.

AU - Haug, R.

N1 - Funding information: G.Yu.V acknowledges the support of the Russian Science Foundation, project no. 17-72-10134.

PY - 2019/9

Y1 - 2019/9

N2 - Abstract: The magnetoresistances of single-layer graphene samples with various types of scattering impurities are measured over wide temperature and magnetic field ranges. The magnetoresistance of samples with a short-range potential is shown to be proportional to the square root of the magnetic field except for the cases of relatively low concentrations, where the magnetoresistance is linear. The square-root temperature dependence of the magnetoresistance is analyzed and good agreement with theoretical calculations is obtained. These results indicate that the square-root magnetoresistance in low magnetic fields can be considered as a characteristic feature of single-layer graphene with a short-range disorder.

AB - Abstract: The magnetoresistances of single-layer graphene samples with various types of scattering impurities are measured over wide temperature and magnetic field ranges. The magnetoresistance of samples with a short-range potential is shown to be proportional to the square root of the magnetic field except for the cases of relatively low concentrations, where the magnetoresistance is linear. The square-root temperature dependence of the magnetoresistance is analyzed and good agreement with theoretical calculations is obtained. These results indicate that the square-root magnetoresistance in low magnetic fields can be considered as a characteristic feature of single-layer graphene with a short-range disorder.

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