Details
| Original language | English |
|---|---|
| Article number | 193307 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 79 |
| Issue number | 19 |
| Publication status | Published - 18 May 2009 |
Abstract
Very high precision measurements of the electron Landé g factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature-dependent effective mass temperature dependence of the interband matrix element within a common five-level k□p theory can model both parameters consistently. A strong decrease in the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 79, No. 19, 193307, 18.05.2009.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Temperature-dependent electron Landé g factor and the interband matrix element of GaAs
AU - Hübner, Jens
AU - Döhrmann, Stephanie
AU - Hägele, Daniel
AU - Oestreich, Michael
PY - 2009/5/18
Y1 - 2009/5/18
N2 - Very high precision measurements of the electron Landé g factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature-dependent effective mass temperature dependence of the interband matrix element within a common five-level k□p theory can model both parameters consistently. A strong decrease in the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.
AB - Very high precision measurements of the electron Landé g factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature-dependent effective mass temperature dependence of the interband matrix element within a common five-level k□p theory can model both parameters consistently. A strong decrease in the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.
UR - http://www.scopus.com/inward/record.url?scp=67449105609&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.79.193307
DO - 10.1103/PhysRevB.79.193307
M3 - Article
AN - SCOPUS:67449105609
VL - 79
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 19
M1 - 193307
ER -