Details
| Original language | English |
|---|---|
| Article number | 013182 |
| Number of pages | 10 |
| Journal | Physical Review Research |
| Volume | 5 |
| Issue number | 1 |
| Publication status | Published - 15 Mar 2023 |
Abstract
We measure the temperature dependence of the indirect band gap of isotopically purified Si28:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap change by more than one order of magnitude and reveal a T4 dependence which is about a factor of two less than observed in previous measurements. Such a T4 dependence is predicted by theory, but the absolute values differ between our experiment and the most up-to-date calculations by a factor of 30, corroborating that the electron-phonon interaction at low temperatures is still not correctly included into theory. What is more, the ability of such very high-precision band-gap measurements facilitates the use of time- and spatially resolved Si28:P absorption as a contactless, local thermometer and electric field sensor with a demonstrated time resolution of milliseconds.
ASJC Scopus subject areas
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Physical Review Research, Vol. 5, No. 1, 013182, 15.03.2023.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Temperature dependence of the band gap of Si 28:P at very low temperatures measured via time-resolved optical spectroscopy
AU - Sauter, E.
AU - Abrosimov, N. V.
AU - Hübner, J.
AU - Oestreich, M.
N1 - Funding Information: This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy - EXC-2123 QuantumFrontiers - 390837967, Research Training Group 1991, OE-177/10-2, and OE-177/12-1.
PY - 2023/3/15
Y1 - 2023/3/15
N2 - We measure the temperature dependence of the indirect band gap of isotopically purified Si28:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap change by more than one order of magnitude and reveal a T4 dependence which is about a factor of two less than observed in previous measurements. Such a T4 dependence is predicted by theory, but the absolute values differ between our experiment and the most up-to-date calculations by a factor of 30, corroborating that the electron-phonon interaction at low temperatures is still not correctly included into theory. What is more, the ability of such very high-precision band-gap measurements facilitates the use of time- and spatially resolved Si28:P absorption as a contactless, local thermometer and electric field sensor with a demonstrated time resolution of milliseconds.
AB - We measure the temperature dependence of the indirect band gap of isotopically purified Si28:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap change by more than one order of magnitude and reveal a T4 dependence which is about a factor of two less than observed in previous measurements. Such a T4 dependence is predicted by theory, but the absolute values differ between our experiment and the most up-to-date calculations by a factor of 30, corroborating that the electron-phonon interaction at low temperatures is still not correctly included into theory. What is more, the ability of such very high-precision band-gap measurements facilitates the use of time- and spatially resolved Si28:P absorption as a contactless, local thermometer and electric field sensor with a demonstrated time resolution of milliseconds.
UR - http://www.scopus.com/inward/record.url?scp=85151384598&partnerID=8YFLogxK
U2 - 10.1103/PhysRevResearch.5.013182
DO - 10.1103/PhysRevResearch.5.013182
M3 - Article
AN - SCOPUS:85151384598
VL - 5
JO - Physical Review Research
JF - Physical Review Research
SN - 2643-1564
IS - 1
M1 - 013182
ER -