Details
| Original language | English |
|---|---|
| Pages (from-to) | 7911-7916 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 53 |
| Issue number | 12 |
| Publication status | Published - 15 Mar 1996 |
| Externally published | Yes |
Abstract
The temperature and density dependence of spin quantum beats of electrons is measured by time-resolved photoluminescence spectroscopy and yields the electron Landé g factor in bulk GaAs, InP, and CdTe. In GaAs the g factor increases linearly from -0.44 at 4 K to -0.30 at 280 K; in InP the g factor is 1.20 at 4 K, exhibiting a very small temperature dependence up to 160 K, and in CdTe the g factor follows between T=4 K and 240 K the empirical equation g=-1.653+4×(Formula presented) T+2.8×(Formula presented). In GaAs we demonstrate the suppression of spin quantum beats due to Fermi blocking in a degenerate electron gas and measure an increase of the GaAs g factor from -0.44 at densities below 1×(Formula presented) to -0.33 at (Formula presented).
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 12, 15.03.1996, p. 7911-7916.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Temperature and density dependence of the electron Landé g factor in semiconductors
AU - Oestreich, Michael
AU - Hallstein, S.
AU - Heberle, A.
AU - Eberl, K.
AU - Bauser, E.
AU - Rühle, Wolfgang W.
PY - 1996/3/15
Y1 - 1996/3/15
N2 - The temperature and density dependence of spin quantum beats of electrons is measured by time-resolved photoluminescence spectroscopy and yields the electron Landé g factor in bulk GaAs, InP, and CdTe. In GaAs the g factor increases linearly from -0.44 at 4 K to -0.30 at 280 K; in InP the g factor is 1.20 at 4 K, exhibiting a very small temperature dependence up to 160 K, and in CdTe the g factor follows between T=4 K and 240 K the empirical equation g=-1.653+4×(Formula presented) T+2.8×(Formula presented). In GaAs we demonstrate the suppression of spin quantum beats due to Fermi blocking in a degenerate electron gas and measure an increase of the GaAs g factor from -0.44 at densities below 1×(Formula presented) to -0.33 at (Formula presented).
AB - The temperature and density dependence of spin quantum beats of electrons is measured by time-resolved photoluminescence spectroscopy and yields the electron Landé g factor in bulk GaAs, InP, and CdTe. In GaAs the g factor increases linearly from -0.44 at 4 K to -0.30 at 280 K; in InP the g factor is 1.20 at 4 K, exhibiting a very small temperature dependence up to 160 K, and in CdTe the g factor follows between T=4 K and 240 K the empirical equation g=-1.653+4×(Formula presented) T+2.8×(Formula presented). In GaAs we demonstrate the suppression of spin quantum beats due to Fermi blocking in a degenerate electron gas and measure an increase of the GaAs g factor from -0.44 at densities below 1×(Formula presented) to -0.33 at (Formula presented).
UR - http://www.scopus.com/inward/record.url?scp=0001297212&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.53.7911
DO - 10.1103/PhysRevB.53.7911
M3 - Article
AN - SCOPUS:0001297212
VL - 53
SP - 7911
EP - 7916
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 12
ER -