Details
| Original language | English |
|---|---|
| Pages (from-to) | 217-226 |
| Number of pages | 10 |
| Journal | Crystal research and technology |
| Volume | 34 |
| Issue number | 2 |
| Publication status | Published - 1 Apr 1999 |
Abstract
A system of coupled mathematical models and the corresponding program package is developed to study the interface shape, heat transfer, thermal stresses, fluid flow as well as the transient dopant segregation in the floating zone (FZ) growth of large silicon crystals (∅≥100mm) grown by the needle-eye technique. The floating zone method with needle-eye technique is used to produce high-purity silicon single crystals for semiconductor devices to overcome the problems resulting from the use of crucibles. The high frequency electric current induced by the pancake induction coil, the temperature gradients and the feed/crystal rotation determine the free surface shape of the molten zone and cause the fluid motion. The quality of the growing crystal depends on the shape of the growth interface, the temperature gradients and corresponding thermal stresses in the single crystal, the fluid flow, and especially on the dopant segregation near the growth interface. From the calculated transient dopant concentration fields in the molten zone the macroscopic and microscopic resistivity distribution in the single crystal is derived. The numerical results of the resistivity distributions are compared with the resistivity distributions measured in the grown crystal.
Keywords
- Crystal impurities, Finite element analysis, Hydrodynamic stability, Melt crystal growth
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Crystal research and technology, Vol. 34, No. 2, 01.04.1999, p. 217-226.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - System of Mathematical Models for the Analysis of Industrial FZ-Si-Crystal Growth Processes
AU - Muiznieks, Andris
AU - Raming, Georg
AU - Mühlbauer, Alfred
N1 - Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1999/4/1
Y1 - 1999/4/1
N2 - A system of coupled mathematical models and the corresponding program package is developed to study the interface shape, heat transfer, thermal stresses, fluid flow as well as the transient dopant segregation in the floating zone (FZ) growth of large silicon crystals (∅≥100mm) grown by the needle-eye technique. The floating zone method with needle-eye technique is used to produce high-purity silicon single crystals for semiconductor devices to overcome the problems resulting from the use of crucibles. The high frequency electric current induced by the pancake induction coil, the temperature gradients and the feed/crystal rotation determine the free surface shape of the molten zone and cause the fluid motion. The quality of the growing crystal depends on the shape of the growth interface, the temperature gradients and corresponding thermal stresses in the single crystal, the fluid flow, and especially on the dopant segregation near the growth interface. From the calculated transient dopant concentration fields in the molten zone the macroscopic and microscopic resistivity distribution in the single crystal is derived. The numerical results of the resistivity distributions are compared with the resistivity distributions measured in the grown crystal.
AB - A system of coupled mathematical models and the corresponding program package is developed to study the interface shape, heat transfer, thermal stresses, fluid flow as well as the transient dopant segregation in the floating zone (FZ) growth of large silicon crystals (∅≥100mm) grown by the needle-eye technique. The floating zone method with needle-eye technique is used to produce high-purity silicon single crystals for semiconductor devices to overcome the problems resulting from the use of crucibles. The high frequency electric current induced by the pancake induction coil, the temperature gradients and the feed/crystal rotation determine the free surface shape of the molten zone and cause the fluid motion. The quality of the growing crystal depends on the shape of the growth interface, the temperature gradients and corresponding thermal stresses in the single crystal, the fluid flow, and especially on the dopant segregation near the growth interface. From the calculated transient dopant concentration fields in the molten zone the macroscopic and microscopic resistivity distribution in the single crystal is derived. The numerical results of the resistivity distributions are compared with the resistivity distributions measured in the grown crystal.
KW - Crystal impurities
KW - Finite element analysis
KW - Hydrodynamic stability
KW - Melt crystal growth
UR - http://www.scopus.com/inward/record.url?scp=0032756123&partnerID=8YFLogxK
U2 - 10.1002/(sici)1521-4079(199902)34:2<217::aid-crat217>3.0.co;2-1
DO - 10.1002/(sici)1521-4079(199902)34:2<217::aid-crat217>3.0.co;2-1
M3 - Article
AN - SCOPUS:0032756123
VL - 34
SP - 217
EP - 226
JO - Crystal research and technology
JF - Crystal research and technology
SN - 0232-1300
IS - 2
ER -