Surfactant-mediated growth of germanium on Si(100) by MBE and SPE

Research output: Contribution to journalArticleResearchpeer review

Authors

  • H. J. Osten
  • J. Klatt
  • G. Lippert
  • E. Bugiel

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
View graph of relations

Details

Original languageEnglish
Pages (from-to)396-400
Number of pages5
JournalJournal of crystal growth
Volume127
Issue number1-4
Publication statusPublished - 2 Feb 1993
Externally publishedYes

Abstract

Germanium layers of 10 and 30 nm thickness have been grown on Si(100) with and without antimony as a surfactant by molecular beam epitaxy (MBE) and solid phase epitaxy (SPE) and investigated in situ by RHEED and XPS and ex situ by TEM and XRD. Without a surfactant germanium growth proceed in a typical Stranski-Krastanov mode. The system is minimizing its built-in strain energy by undergoing strain relaxation through a clustering mechanism (islanding). In all surfactant-mediated growth processes it was possible to obtain smooth layers without island formation. The influence of different ways for introducing the surfactant layer (at the interface between substrate and growing film, in the growing film below or above the critical Stranski-Krastanov thickness, or on top of the grown Ge film) will be presented. Especially in surfactant-controlled SPE, the smooth epitaxial germanium layer was obtained by passing through an island formation stage. These islands formed below 400°C are of different structure than the ones formed without a surfactant. Possible mechanism for the "smoothing out" of islands developed in the beginning stage of surfactant-controlled SPE will be discussed. The island formation stage can be completely suppressed by depositing the surfactant on top of the amorphous Ge layer before increasing the temperature.

ASJC Scopus subject areas

Cite this

Surfactant-mediated growth of germanium on Si(100) by MBE and SPE. / Osten, H. J.; Klatt, J.; Lippert, G. et al.
In: Journal of crystal growth, Vol. 127, No. 1-4, 02.02.1993, p. 396-400.

Research output: Contribution to journalArticleResearchpeer review

Osten HJ, Klatt J, Lippert G, Bugiel E. Surfactant-mediated growth of germanium on Si(100) by MBE and SPE. Journal of crystal growth. 1993 Feb 2;127(1-4):396-400. doi: 10.1016/0022-0248(93)90647-F
Osten, H. J. ; Klatt, J. ; Lippert, G. et al. / Surfactant-mediated growth of germanium on Si(100) by MBE and SPE. In: Journal of crystal growth. 1993 ; Vol. 127, No. 1-4. pp. 396-400.
Download
@article{e6ece61da7d242caa78a8be838f1b7c4,
title = "Surfactant-mediated growth of germanium on Si(100) by MBE and SPE",
abstract = "Germanium layers of 10 and 30 nm thickness have been grown on Si(100) with and without antimony as a surfactant by molecular beam epitaxy (MBE) and solid phase epitaxy (SPE) and investigated in situ by RHEED and XPS and ex situ by TEM and XRD. Without a surfactant germanium growth proceed in a typical Stranski-Krastanov mode. The system is minimizing its built-in strain energy by undergoing strain relaxation through a clustering mechanism (islanding). In all surfactant-mediated growth processes it was possible to obtain smooth layers without island formation. The influence of different ways for introducing the surfactant layer (at the interface between substrate and growing film, in the growing film below or above the critical Stranski-Krastanov thickness, or on top of the grown Ge film) will be presented. Especially in surfactant-controlled SPE, the smooth epitaxial germanium layer was obtained by passing through an island formation stage. These islands formed below 400°C are of different structure than the ones formed without a surfactant. Possible mechanism for the {"}smoothing out{"} of islands developed in the beginning stage of surfactant-controlled SPE will be discussed. The island formation stage can be completely suppressed by depositing the surfactant on top of the amorphous Ge layer before increasing the temperature.",
author = "Osten, {H. J.} and J. Klatt and G. Lippert and E. Bugiel",
year = "1993",
month = feb,
day = "2",
doi = "10.1016/0022-0248(93)90647-F",
language = "English",
volume = "127",
pages = "396--400",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

Download

TY - JOUR

T1 - Surfactant-mediated growth of germanium on Si(100) by MBE and SPE

AU - Osten, H. J.

AU - Klatt, J.

AU - Lippert, G.

AU - Bugiel, E.

PY - 1993/2/2

Y1 - 1993/2/2

N2 - Germanium layers of 10 and 30 nm thickness have been grown on Si(100) with and without antimony as a surfactant by molecular beam epitaxy (MBE) and solid phase epitaxy (SPE) and investigated in situ by RHEED and XPS and ex situ by TEM and XRD. Without a surfactant germanium growth proceed in a typical Stranski-Krastanov mode. The system is minimizing its built-in strain energy by undergoing strain relaxation through a clustering mechanism (islanding). In all surfactant-mediated growth processes it was possible to obtain smooth layers without island formation. The influence of different ways for introducing the surfactant layer (at the interface between substrate and growing film, in the growing film below or above the critical Stranski-Krastanov thickness, or on top of the grown Ge film) will be presented. Especially in surfactant-controlled SPE, the smooth epitaxial germanium layer was obtained by passing through an island formation stage. These islands formed below 400°C are of different structure than the ones formed without a surfactant. Possible mechanism for the "smoothing out" of islands developed in the beginning stage of surfactant-controlled SPE will be discussed. The island formation stage can be completely suppressed by depositing the surfactant on top of the amorphous Ge layer before increasing the temperature.

AB - Germanium layers of 10 and 30 nm thickness have been grown on Si(100) with and without antimony as a surfactant by molecular beam epitaxy (MBE) and solid phase epitaxy (SPE) and investigated in situ by RHEED and XPS and ex situ by TEM and XRD. Without a surfactant germanium growth proceed in a typical Stranski-Krastanov mode. The system is minimizing its built-in strain energy by undergoing strain relaxation through a clustering mechanism (islanding). In all surfactant-mediated growth processes it was possible to obtain smooth layers without island formation. The influence of different ways for introducing the surfactant layer (at the interface between substrate and growing film, in the growing film below or above the critical Stranski-Krastanov thickness, or on top of the grown Ge film) will be presented. Especially in surfactant-controlled SPE, the smooth epitaxial germanium layer was obtained by passing through an island formation stage. These islands formed below 400°C are of different structure than the ones formed without a surfactant. Possible mechanism for the "smoothing out" of islands developed in the beginning stage of surfactant-controlled SPE will be discussed. The island formation stage can be completely suppressed by depositing the surfactant on top of the amorphous Ge layer before increasing the temperature.

UR - http://www.scopus.com/inward/record.url?scp=0027904803&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(93)90647-F

DO - 10.1016/0022-0248(93)90647-F

M3 - Article

AN - SCOPUS:0027904803

VL - 127

SP - 396

EP - 400

JO - Journal of crystal growth

JF - Journal of crystal growth

SN - 0022-0248

IS - 1-4

ER -