Details
| Original language | English |
|---|---|
| Pages (from-to) | 27-30 |
| Number of pages | 4 |
| Journal | THIN SOLID FILMS |
| Volume | 557 |
| Early online date | 11 Sept 2013 |
| Publication status | Published - 30 Apr 2014 |
Abstract
We report on the surfactant-mediated epitaxy (SME) of Si 1 -xGex films with x = 0.23-1 on Si(001) using antimony as surfactant. We observe a transition in strain relaxation at a critical composition xT = 0.58-0.66. Above this value full relaxation is achieved by a network of full edge dislocation confined to the interface in analogy to SME of pure germanium on Si(001). 100 nm thick Si 1 -xGex films with surface roughness values less than 1 nm and abrupt interfaces are obtained, as the surfactant reduces strain induced roughening and hinders interdiffusion.
Keywords
- Germanium, Silicon, Silicon-germanium alloy, Strain relaxation, Surface roughness, Surfactant-mediated epitaxy
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: THIN SOLID FILMS, Vol. 557, 30.04.2014, p. 27-30.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Surfactant-mediated epitaxy of silicon germanium films on silicon (001) substrates
AU - Wietler, T. F.
AU - Schmidt, J.
AU - Tetzlaff, D.
AU - Bugiel, E.
PY - 2014/4/30
Y1 - 2014/4/30
N2 - We report on the surfactant-mediated epitaxy (SME) of Si 1 -xGex films with x = 0.23-1 on Si(001) using antimony as surfactant. We observe a transition in strain relaxation at a critical composition xT = 0.58-0.66. Above this value full relaxation is achieved by a network of full edge dislocation confined to the interface in analogy to SME of pure germanium on Si(001). 100 nm thick Si 1 -xGex films with surface roughness values less than 1 nm and abrupt interfaces are obtained, as the surfactant reduces strain induced roughening and hinders interdiffusion.
AB - We report on the surfactant-mediated epitaxy (SME) of Si 1 -xGex films with x = 0.23-1 on Si(001) using antimony as surfactant. We observe a transition in strain relaxation at a critical composition xT = 0.58-0.66. Above this value full relaxation is achieved by a network of full edge dislocation confined to the interface in analogy to SME of pure germanium on Si(001). 100 nm thick Si 1 -xGex films with surface roughness values less than 1 nm and abrupt interfaces are obtained, as the surfactant reduces strain induced roughening and hinders interdiffusion.
KW - Germanium
KW - Silicon
KW - Silicon-germanium alloy
KW - Strain relaxation
KW - Surface roughness
KW - Surfactant-mediated epitaxy
UR - http://www.scopus.com/inward/record.url?scp=84897917830&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2013.08.125
DO - 10.1016/j.tsf.2013.08.125
M3 - Article
AN - SCOPUS:84897917830
VL - 557
SP - 27
EP - 30
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
ER -