Details
| Original language | English |
|---|---|
| Title of host publication | Physics of Semiconductors |
| Subtitle of host publication | 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B |
| Pages | 67-68 |
| Number of pages | 2 |
| Publication status | Published - 10 Apr 2007 |
| Event | 28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: 24 Jul 2006 → 28 Jul 2006 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 893 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
As a first step towards germanium embedded in silicon wafers, we investigated the surfactant-mediated epitaxy of Ge on structured Si substrates. High-resolution x-ray diffraction (XRD) showed that the Ge-films are <001>-oriented and fully relaxed. Transmission electron microscopy (TEM) inspection in cross-section and plan view revealed uniform films of high structural perfection comparable to those obtained on non-structured wafers. A regular misfit dislocation network is found at the Ge/Si interface at the bottom of the wells, the <111>-oriented side-walls, and the non-etched areas. No defect accumulation was observed at kinks or side-walls. We conclude that the growth mode is not affected by the different surface orientations present on the substrate.
Keywords
- Germanium, Silicon, Structured substrate, Surfactant-mediated epitaxy
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
Cite this
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Physics of Semiconductors : 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 67-68 (AIP Conference Proceedings; Vol. 893).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Surfactant-mediated epitaxy of germanium on structured silicon substrates
T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006
AU - Wietler, T. F.
AU - Bugiel, E.
AU - Hofmann, K. R.
PY - 2007/4/10
Y1 - 2007/4/10
N2 - As a first step towards germanium embedded in silicon wafers, we investigated the surfactant-mediated epitaxy of Ge on structured Si substrates. High-resolution x-ray diffraction (XRD) showed that the Ge-films are <001>-oriented and fully relaxed. Transmission electron microscopy (TEM) inspection in cross-section and plan view revealed uniform films of high structural perfection comparable to those obtained on non-structured wafers. A regular misfit dislocation network is found at the Ge/Si interface at the bottom of the wells, the <111>-oriented side-walls, and the non-etched areas. No defect accumulation was observed at kinks or side-walls. We conclude that the growth mode is not affected by the different surface orientations present on the substrate.
AB - As a first step towards germanium embedded in silicon wafers, we investigated the surfactant-mediated epitaxy of Ge on structured Si substrates. High-resolution x-ray diffraction (XRD) showed that the Ge-films are <001>-oriented and fully relaxed. Transmission electron microscopy (TEM) inspection in cross-section and plan view revealed uniform films of high structural perfection comparable to those obtained on non-structured wafers. A regular misfit dislocation network is found at the Ge/Si interface at the bottom of the wells, the <111>-oriented side-walls, and the non-etched areas. No defect accumulation was observed at kinks or side-walls. We conclude that the growth mode is not affected by the different surface orientations present on the substrate.
KW - Germanium
KW - Silicon
KW - Structured substrate
KW - Surfactant-mediated epitaxy
UR - http://www.scopus.com/inward/record.url?scp=77958516068&partnerID=8YFLogxK
U2 - 10.1063/1.2729773
DO - 10.1063/1.2729773
M3 - Conference contribution
AN - SCOPUS:77958516068
SN - 9780735403970
T3 - AIP Conference Proceedings
SP - 67
EP - 68
BT - Physics of Semiconductors
Y2 - 24 July 2006 through 28 July 2006
ER -