Details
| Original language | English |
|---|---|
| Title of host publication | 2015 1st Workshop on Nanotechnology in Instrumentation and Measurement, NANOFIM 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 136-140 |
| Number of pages | 5 |
| ISBN (print) | 9781509051519 |
| Publication status | Published - 3 Aug 2018 |
| Event | 1st Workshop on Nanotechnology in Instrumentation and Measurement, NANOFIM 2015 - Lecce, Italy Duration: 24 Jul 2015 → 25 Jul 2015 |
Abstract
III-V semiconductor compound based nanowires (NWs) are expected to impact the fields of nano-electronic, nano-photonic, and photovoltaic devices. Self-assembly of crystal-phase controlled and high optical quality III-V NWs has been demonstrated. However, important physical and technological issues, such as carrier transport properties and reproducible incorporation of high dopant concentrations in NW materials, remain to be addressed for enabling robust nano-devices fabrication. In this work, we show the use of a multi-probe scanning tunneling microscope for the rapid electrical characterization of free-standing GaAs NWs, without any need for post-growth sample processing and contact fabrication. In particular, 2-probe I-V measurements were performed along the axis of a single 60-nm diameter unpassivated GaAs NW, and its resistance profile determined, obtaining high (in the range of GΩ) resistance values. Due to its reduced radial dimension, the NW is expected to be completely depleted. Analysis of the NW resistance profile reveals instead, that carrier transport is mediated by the NW surface states. Finally, by using the substrate as a reference electrode and placing the other three STM-tips along the NWs, we demonstrate a 4-point probe geometry that can be used for the electrical characterization of highly doped NWs.
Keywords
- electrical resistivity, III-V semiconductor nanowire, MOVPE self-assembly, scanning probe microscopy
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Instrumentation
Sustainable Development Goals
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2015 1st Workshop on Nanotechnology in Instrumentation and Measurement, NANOFIM 2015. Institute of Electrical and Electronics Engineers Inc., 2018. p. 136-140 8425344.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Surface-mediated electrical transport in single GaAs nanowires
AU - Miccoli, Ilio
AU - Edler, Frederik
AU - Pfnür, Herbert
AU - Tegenkamp, Christoph
AU - Prete, Paola
AU - Lovergine, Nico
N1 - Funding information: The financial support through the DFG is gratefully acknowledged. The authors wish also to acknowledge F. Marzo for assistance during growth experiments and S.Korte from “Forschungszentrum Jülich” for useful discussions during the DPG Spring Meeting (Berlin-TU, 15. -20. March 2015).
PY - 2018/8/3
Y1 - 2018/8/3
N2 - III-V semiconductor compound based nanowires (NWs) are expected to impact the fields of nano-electronic, nano-photonic, and photovoltaic devices. Self-assembly of crystal-phase controlled and high optical quality III-V NWs has been demonstrated. However, important physical and technological issues, such as carrier transport properties and reproducible incorporation of high dopant concentrations in NW materials, remain to be addressed for enabling robust nano-devices fabrication. In this work, we show the use of a multi-probe scanning tunneling microscope for the rapid electrical characterization of free-standing GaAs NWs, without any need for post-growth sample processing and contact fabrication. In particular, 2-probe I-V measurements were performed along the axis of a single 60-nm diameter unpassivated GaAs NW, and its resistance profile determined, obtaining high (in the range of GΩ) resistance values. Due to its reduced radial dimension, the NW is expected to be completely depleted. Analysis of the NW resistance profile reveals instead, that carrier transport is mediated by the NW surface states. Finally, by using the substrate as a reference electrode and placing the other three STM-tips along the NWs, we demonstrate a 4-point probe geometry that can be used for the electrical characterization of highly doped NWs.
AB - III-V semiconductor compound based nanowires (NWs) are expected to impact the fields of nano-electronic, nano-photonic, and photovoltaic devices. Self-assembly of crystal-phase controlled and high optical quality III-V NWs has been demonstrated. However, important physical and technological issues, such as carrier transport properties and reproducible incorporation of high dopant concentrations in NW materials, remain to be addressed for enabling robust nano-devices fabrication. In this work, we show the use of a multi-probe scanning tunneling microscope for the rapid electrical characterization of free-standing GaAs NWs, without any need for post-growth sample processing and contact fabrication. In particular, 2-probe I-V measurements were performed along the axis of a single 60-nm diameter unpassivated GaAs NW, and its resistance profile determined, obtaining high (in the range of GΩ) resistance values. Due to its reduced radial dimension, the NW is expected to be completely depleted. Analysis of the NW resistance profile reveals instead, that carrier transport is mediated by the NW surface states. Finally, by using the substrate as a reference electrode and placing the other three STM-tips along the NWs, we demonstrate a 4-point probe geometry that can be used for the electrical characterization of highly doped NWs.
KW - electrical resistivity
KW - III-V semiconductor nanowire
KW - MOVPE self-assembly
KW - scanning probe microscopy
UR - http://www.scopus.com/inward/record.url?scp=85052230959&partnerID=8YFLogxK
U2 - 10.1109/nanofim.2015.8425344
DO - 10.1109/nanofim.2015.8425344
M3 - Conference contribution
AN - SCOPUS:85052230959
SN - 9781509051519
SP - 136
EP - 140
BT - 2015 1st Workshop on Nanotechnology in Instrumentation and Measurement, NANOFIM 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1st Workshop on Nanotechnology in Instrumentation and Measurement, NANOFIM 2015
Y2 - 24 July 2015 through 25 July 2015
ER -