Details
| Original language | English |
|---|---|
| Article number | 093012 |
| Journal | New Journal of Physics |
| Volume | 18 |
| Issue number | 9 |
| Publication status | Published - 6 Sept 2016 |
Abstract
Topologically non-trivial surface stateswere reported first on Bi1-xSbx bulk crystals. In this studywe present transportmeasurements performed on thin Bi1-x1-xSbx-films (up to 24 nmthickness) grown epitaxially on Si(111) with various Sb-concentrations (up to x=0.22). The analysis of the temperature dependency allowed us to distinguish between different transport channels originating from surface and bulk bands as well as impurity states. At temperatures below 30 Kthe transport is mediated by surface states while at higher temperatures activated transport via bulk channels sets in. The surface state conductivity and bulk band gaps can be tuned by the Sb-concentration and film thickness, respectively. For films as thin as 4 nmthe surface state transport is strongly suppressed in contrast to Bi(111) films grown under identical conditions. The impurity channel is of intrinsic origin due to the growth and alloy formation process and turns out to be located at the buried interface.
Keywords
- surface transport, thin films, topological insulator
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: New Journal of Physics, Vol. 18, No. 9, 093012, 06.09.2016.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Surface state conductivity in epitaxially grown Bi1-xSbx(111) films
AU - Koch, Julian
AU - Kröger, Philipp
AU - Pfnür, Herbert
AU - Tegenkamp, Christoph
PY - 2016/9/6
Y1 - 2016/9/6
N2 - Topologically non-trivial surface stateswere reported first on Bi1-xSbx bulk crystals. In this studywe present transportmeasurements performed on thin Bi1-x1-xSbx-films (up to 24 nmthickness) grown epitaxially on Si(111) with various Sb-concentrations (up to x=0.22). The analysis of the temperature dependency allowed us to distinguish between different transport channels originating from surface and bulk bands as well as impurity states. At temperatures below 30 Kthe transport is mediated by surface states while at higher temperatures activated transport via bulk channels sets in. The surface state conductivity and bulk band gaps can be tuned by the Sb-concentration and film thickness, respectively. For films as thin as 4 nmthe surface state transport is strongly suppressed in contrast to Bi(111) films grown under identical conditions. The impurity channel is of intrinsic origin due to the growth and alloy formation process and turns out to be located at the buried interface.
AB - Topologically non-trivial surface stateswere reported first on Bi1-xSbx bulk crystals. In this studywe present transportmeasurements performed on thin Bi1-x1-xSbx-films (up to 24 nmthickness) grown epitaxially on Si(111) with various Sb-concentrations (up to x=0.22). The analysis of the temperature dependency allowed us to distinguish between different transport channels originating from surface and bulk bands as well as impurity states. At temperatures below 30 Kthe transport is mediated by surface states while at higher temperatures activated transport via bulk channels sets in. The surface state conductivity and bulk band gaps can be tuned by the Sb-concentration and film thickness, respectively. For films as thin as 4 nmthe surface state transport is strongly suppressed in contrast to Bi(111) films grown under identical conditions. The impurity channel is of intrinsic origin due to the growth and alloy formation process and turns out to be located at the buried interface.
KW - surface transport
KW - thin films
KW - topological insulator
UR - http://www.scopus.com/inward/record.url?scp=84989336916&partnerID=8YFLogxK
U2 - 10.1088/1367-2630/18/9/093012
DO - 10.1088/1367-2630/18/9/093012
M3 - Article
AN - SCOPUS:84989336916
VL - 18
JO - New Journal of Physics
JF - New Journal of Physics
SN - 1367-2630
IS - 9
M1 - 093012
ER -