Details
| Original language | English |
|---|---|
| Pages (from-to) | 4-6 |
| Number of pages | 3 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 6 |
| Issue number | 1 |
| Publication status | E-pub ahead of print - 17 Oct 2011 |
| Externally published | Yes |
Abstract
In recent years Al 2O 3 has received tremendous interest in the photovoltaic community for the application as surface passivation layer for crystalline silicon. Especially p-type c-Si surfaces are very effectively passivated by Al 2O 3, including p-type emitters, due to the high fixed negative charge in the Al 2O 3 film. In this Letter we show that Al 2O 3 prepared by plasma-assisted atomic layer deposition (ALD) can actually provide a good level of surface passivation for highly doped n-type emitters in the range of 10-100 Ω/sq with implied-V oc values up to 680 mV. For n-type emitters in the range of 100-200 Ω/sq the implied-V oc drops to a value of 600 mV for a 200 Ω/sq emitter, indicating a decreased level of surface passivation. For even lighter doped n-type surfaces the passivation quality increases again to implied-V oc values well above 700 mV. Hence, the results presented here indicate that within a certain doping range, highly doped n- and p-type surfaces can be passivated simultaneously by Al 2O 3.
Keywords
- Aluminium oxide, N-type emitters, Solar cells, Surface passivation
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
Sustainable Development Goals
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In: Physica Status Solidi - Rapid Research Letters, Vol. 6, No. 1, 17.10.2011, p. 4-6.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3
AU - Hoex, B.
AU - van de Sanden, M. C.M.
AU - Schmidt, J.
AU - Brendel, R.
AU - Kessels, W. M.M.
PY - 2011/10/17
Y1 - 2011/10/17
N2 - In recent years Al 2O 3 has received tremendous interest in the photovoltaic community for the application as surface passivation layer for crystalline silicon. Especially p-type c-Si surfaces are very effectively passivated by Al 2O 3, including p-type emitters, due to the high fixed negative charge in the Al 2O 3 film. In this Letter we show that Al 2O 3 prepared by plasma-assisted atomic layer deposition (ALD) can actually provide a good level of surface passivation for highly doped n-type emitters in the range of 10-100 Ω/sq with implied-V oc values up to 680 mV. For n-type emitters in the range of 100-200 Ω/sq the implied-V oc drops to a value of 600 mV for a 200 Ω/sq emitter, indicating a decreased level of surface passivation. For even lighter doped n-type surfaces the passivation quality increases again to implied-V oc values well above 700 mV. Hence, the results presented here indicate that within a certain doping range, highly doped n- and p-type surfaces can be passivated simultaneously by Al 2O 3.
AB - In recent years Al 2O 3 has received tremendous interest in the photovoltaic community for the application as surface passivation layer for crystalline silicon. Especially p-type c-Si surfaces are very effectively passivated by Al 2O 3, including p-type emitters, due to the high fixed negative charge in the Al 2O 3 film. In this Letter we show that Al 2O 3 prepared by plasma-assisted atomic layer deposition (ALD) can actually provide a good level of surface passivation for highly doped n-type emitters in the range of 10-100 Ω/sq with implied-V oc values up to 680 mV. For n-type emitters in the range of 100-200 Ω/sq the implied-V oc drops to a value of 600 mV for a 200 Ω/sq emitter, indicating a decreased level of surface passivation. For even lighter doped n-type surfaces the passivation quality increases again to implied-V oc values well above 700 mV. Hence, the results presented here indicate that within a certain doping range, highly doped n- and p-type surfaces can be passivated simultaneously by Al 2O 3.
KW - Aluminium oxide
KW - N-type emitters
KW - Solar cells
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=83455236144&partnerID=8YFLogxK
U2 - 10.1002/pssr.201105445
DO - 10.1002/pssr.201105445
M3 - Article
AN - SCOPUS:83455236144
VL - 6
SP - 4
EP - 6
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 1
ER -