Details
| Original language | English |
|---|---|
| Pages (from-to) | 1918-1920 |
| Number of pages | 3 |
| Journal | Applied physics letters |
| Volume | 61 |
| Issue number | 16 |
| Early online date | 19 Oct 1992 |
| Publication status | E-pub ahead of print - 19 Oct 1992 |
| Externally published | Yes |
Abstract
Smooth epitaxial 10 and 30 nm germanium layers have been grown on Si(100) by surfactant-controlled solid phase epitaxy. The layers were characterized by reflection high energy electron diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. By depositing one monolayer antimony on top of the amorphous germanium layer it was possible to crystallize the germanium directly into a smooth epitaxial structure without any island formation. The obtained low-defect layers are relaxed.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 61, No. 16, 19.10.1992, p. 1918-1920.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100)
AU - Osten, H. J.
AU - Bugiel, E.
AU - Klatt, J.
PY - 1992/10/19
Y1 - 1992/10/19
N2 - Smooth epitaxial 10 and 30 nm germanium layers have been grown on Si(100) by surfactant-controlled solid phase epitaxy. The layers were characterized by reflection high energy electron diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. By depositing one monolayer antimony on top of the amorphous germanium layer it was possible to crystallize the germanium directly into a smooth epitaxial structure without any island formation. The obtained low-defect layers are relaxed.
AB - Smooth epitaxial 10 and 30 nm germanium layers have been grown on Si(100) by surfactant-controlled solid phase epitaxy. The layers were characterized by reflection high energy electron diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. By depositing one monolayer antimony on top of the amorphous germanium layer it was possible to crystallize the germanium directly into a smooth epitaxial structure without any island formation. The obtained low-defect layers are relaxed.
UR - http://www.scopus.com/inward/record.url?scp=0000333292&partnerID=8YFLogxK
U2 - 10.1063/1.108363
DO - 10.1063/1.108363
M3 - Article
AN - SCOPUS:0000333292
VL - 61
SP - 1918
EP - 1920
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 16
ER -