Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100)

Research output: Contribution to journal › Article › Research › peer review

Authors

  • H. J. Osten
  • E. Bugiel
  • J. Klatt

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)1918-1920
Number of pages3
JournalApplied physics letters
Volume61
Issue number16
Publication statusPublished - 19 Oct 1992
Externally publishedYes

Abstract

Smooth epitaxial 10 and 30 nm germanium layers have been grown on Si(100) by surfactant-controlled solid phase epitaxy. The layers were characterized by reflection high energy electron diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy. By depositing one monolayer antimony on top of the amorphous germanium layer it was possible to crystallize the germanium directly into a smooth epitaxial structure without any island formation. The obtained low-defect layers are relaxed.

ASJC Scopus subject areas

Cite this

Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100). / Osten, H. J.; Bugiel, E.; Klatt, J.
In: Applied physics letters, Vol. 61, No. 16, 19.10.1992, p. 1918-1920.

Research output: Contribution to journal › Article › Research › peer review

Osten HJ, Bugiel E, Klatt J. Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100). Applied physics letters. 1992 Oct 19;61(16):1918-1920. doi: 10.1063/1.108363
Osten, H. J. ; Bugiel, E. ; Klatt, J. / Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100). In: Applied physics letters. 1992 ; Vol. 61, No. 16. pp. 1918-1920.
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