Suppressed diffusion of boron and carbon in carbon-rich silicon

Research output: Contribution to journal › Article › Research › peer review

Authors

  • H. Rücker
  • B. Heinemann
  • W. Röpke
  • R. Kurps
  • D. Krüger
  • G. Lippert
  • H. J. Osten

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)1682-1684
Number of pages3
JournalApplied physics letters
Volume73
Issue number12
Publication statusPublished - 21 Sept 1998
Externally publishedYes

Abstract

Transient enhanced diffusion of boron in silicon can be suppressed by substitutional carbon. We show here that diffusion of boron and carbon is strongly reduced in carbon-rich silicon, even when no supersaturation of interstitials due to implantation is present. Pronounced non-Fickian diffusion behavior was found for epitaxially grown-in carbon at concentrations well above its solid solubility. The experimentally observed suppression of B and C diffusion at high C concentrations is explained in terms of a recently proposed model that predicts an undersaturation of Si self-interstitials caused by diffusion of C out of C-rich regions.

ASJC Scopus subject areas

Cite this

Suppressed diffusion of boron and carbon in carbon-rich silicon. / Rücker, H.; Heinemann, B.; Röpke, W. et al.
In: Applied physics letters, Vol. 73, No. 12, 21.09.1998, p. 1682-1684.

Research output: Contribution to journal › Article › Research › peer review

Rücker, H, Heinemann, B, Röpke, W, Kurps, R, Krüger, D, Lippert, G & Osten, HJ 1998, 'Suppressed diffusion of boron and carbon in carbon-rich silicon', Applied physics letters, vol. 73, no. 12, pp. 1682-1684. https://doi.org/10.1063/1.122244
Rücker, H., Heinemann, B., Röpke, W., Kurps, R., Krüger, D., Lippert, G., & Osten, H. J. (1998). Suppressed diffusion of boron and carbon in carbon-rich silicon. Applied physics letters, 73(12), 1682-1684. https://doi.org/10.1063/1.122244
Rücker H, Heinemann B, Röpke W, Kurps R, Krüger D, Lippert G et al. Suppressed diffusion of boron and carbon in carbon-rich silicon. Applied physics letters. 1998 Sept 21;73(12):1682-1684. doi: 10.1063/1.122244
Rücker, H. ; Heinemann, B. ; Röpke, W. et al. / Suppressed diffusion of boron and carbon in carbon-rich silicon. In: Applied physics letters. 1998 ; Vol. 73, No. 12. pp. 1682-1684.
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AU - Röpke, W.

AU - Kurps, R.

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AU - Lippert, G.

AU - Osten, H. J.

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