Details
| Original language | English |
|---|---|
| Pages (from-to) | 268-274 |
| Number of pages | 7 |
| Journal | Materials Science and Engineering B |
| Volume | 36 |
| Issue number | 1-3 |
| Publication status | E-pub ahead of print - 5 Feb 1999 |
| Externally published | Yes |
Abstract
The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si1-x-yGexCy layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.
Keywords
- Alloys, Carbon, Silicon, Supersaturation
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Materials Science and Engineering B, Vol. 36, No. 1-3, 05.02.1999, p. 268-274.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Supersaturated carbon in silicon and silicon/germanium alloys
AU - Osten, H. J.
PY - 1999/2/5
Y1 - 1999/2/5
N2 - The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si1-x-yGexCy layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.
AB - The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si1-x-yGexCy layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.
KW - Alloys
KW - Carbon
KW - Silicon
KW - Supersaturation
UR - http://www.scopus.com/inward/record.url?scp=0010340511&partnerID=8YFLogxK
U2 - 10.1016/0921-5107(95)01272-9
DO - 10.1016/0921-5107(95)01272-9
M3 - Article
AN - SCOPUS:0010340511
VL - 36
SP - 268
EP - 274
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
SN - 0921-5107
IS - 1-3
ER -