Details
| Original language | English |
|---|---|
| Title of host publication | Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B |
| Pages | 815-816 |
| Number of pages | 2 |
| Publication status | Published - 1 Dec 2007 |
| Event | 28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: 24 Jul 2006 → 28 Jul 2006 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 893 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
We apply an external bias voltage to vertically coupled self-assembled InAs quantum dots. We observe pronounced peaks in the I-V characteristic due to resonant transport through a stack of coupled quantum dots. We investigate the noise properties at these peaks and we find an astonishing enhancement of the shot noise at low temperatures with a distinct double-peak structure.
Keywords
- Coupled quantum dots, Enhanced shot noise
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 815-816 (AIP Conference Proceedings; Vol. 893).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Super-poissonian shot noise in tunneling through coupled self-assembled InAs quantum dots
AU - Barthold, P.
AU - Hohls, F.
AU - Maire, N.
AU - Pierz, K.
AU - Haug, R. J.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - We apply an external bias voltage to vertically coupled self-assembled InAs quantum dots. We observe pronounced peaks in the I-V characteristic due to resonant transport through a stack of coupled quantum dots. We investigate the noise properties at these peaks and we find an astonishing enhancement of the shot noise at low temperatures with a distinct double-peak structure.
AB - We apply an external bias voltage to vertically coupled self-assembled InAs quantum dots. We observe pronounced peaks in the I-V characteristic due to resonant transport through a stack of coupled quantum dots. We investigate the noise properties at these peaks and we find an astonishing enhancement of the shot noise at low temperatures with a distinct double-peak structure.
KW - Coupled quantum dots
KW - Enhanced shot noise
UR - http://www.scopus.com/inward/record.url?scp=77958492410&partnerID=8YFLogxK
U2 - 10.1063/1.2730140
DO - 10.1063/1.2730140
M3 - Conference contribution
AN - SCOPUS:77958492410
SN - 9780735403970
T3 - AIP Conference Proceedings
SP - 815
EP - 816
BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006
Y2 - 24 July 2006 through 28 July 2006
ER -