Details
| Original language | English |
|---|---|
| Article number | 2911 |
| Journal | Scientific reports |
| Volume | 9 |
| Issue number | 1 |
| Publication status | Published - 2019 |
| Externally published | Yes |
Abstract
Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three pre-growth surface treatments, often employed as cleaning methods, were investigated. Such treatments provide control over the surface charge of the silicon nitride substrate through modification of the surface functionality, allowing for the optimisation of electrostatic diamond seeding densities. Zeta potential measurements and X-ray photoelectron spectroscopy (XPS) were used to analyse the silicon nitride surface following each treatment. Exposing silicon nitride to an oxygen plasma offered optimal surface conditions for the electrostatic self-assembly of a hydrogen-terminated diamond nanoparticle monolayer. The subsequent growth of boron-doped nanocrystalline diamond thin films on modified silicon nitride, under CVD conditions, produced coalesced films for oxygen plasma and solvent treatments, whilst pin-holing of the diamond film was observed following RCA-1 treatment. The sharpest superconducting transition was observed for diamond grown on oxygen plasma treated silicon nitride, demonstrating it to be of the least structural disorder. Modifications to the substrate surface optimise the seeding and growth processes for the fabrication of diamond on silicon nitride devices.
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In: Scientific reports, Vol. 9, No. 1, 2911, 2019.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Superconducting Diamond on Silicon Nitride for Device Applications
AU - Bland, H.A.
AU - Thomas, E.L.H.
AU - Klemencic, G.M.
AU - Mandal, Soumen
AU - Morgan, D.J.
AU - Papageorgiou, A.
AU - Jones, T.G.
AU - Williams, O.A.
N1 - Publisher Copyright: © 2019, The Author(s).
PY - 2019
Y1 - 2019
N2 - Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three pre-growth surface treatments, often employed as cleaning methods, were investigated. Such treatments provide control over the surface charge of the silicon nitride substrate through modification of the surface functionality, allowing for the optimisation of electrostatic diamond seeding densities. Zeta potential measurements and X-ray photoelectron spectroscopy (XPS) were used to analyse the silicon nitride surface following each treatment. Exposing silicon nitride to an oxygen plasma offered optimal surface conditions for the electrostatic self-assembly of a hydrogen-terminated diamond nanoparticle monolayer. The subsequent growth of boron-doped nanocrystalline diamond thin films on modified silicon nitride, under CVD conditions, produced coalesced films for oxygen plasma and solvent treatments, whilst pin-holing of the diamond film was observed following RCA-1 treatment. The sharpest superconducting transition was observed for diamond grown on oxygen plasma treated silicon nitride, demonstrating it to be of the least structural disorder. Modifications to the substrate surface optimise the seeding and growth processes for the fabrication of diamond on silicon nitride devices.
AB - Chemical vapour deposition (CVD) grown nanocrystalline diamond is an attractive material for the fabrication of devices. For some device architectures, optimisation of its growth on silicon nitride is essential. Here, the effects of three pre-growth surface treatments, often employed as cleaning methods, were investigated. Such treatments provide control over the surface charge of the silicon nitride substrate through modification of the surface functionality, allowing for the optimisation of electrostatic diamond seeding densities. Zeta potential measurements and X-ray photoelectron spectroscopy (XPS) were used to analyse the silicon nitride surface following each treatment. Exposing silicon nitride to an oxygen plasma offered optimal surface conditions for the electrostatic self-assembly of a hydrogen-terminated diamond nanoparticle monolayer. The subsequent growth of boron-doped nanocrystalline diamond thin films on modified silicon nitride, under CVD conditions, produced coalesced films for oxygen plasma and solvent treatments, whilst pin-holing of the diamond film was observed following RCA-1 treatment. The sharpest superconducting transition was observed for diamond grown on oxygen plasma treated silicon nitride, demonstrating it to be of the least structural disorder. Modifications to the substrate surface optimise the seeding and growth processes for the fabrication of diamond on silicon nitride devices.
UR - http://www.scopus.com/inward/record.url?scp=85062258428&partnerID=8YFLogxK
U2 - 10.1038/s41598-019-39707-z
DO - 10.1038/s41598-019-39707-z
M3 - Article
VL - 9
JO - Scientific reports
JF - Scientific reports
SN - 2045-2322
IS - 1
M1 - 2911
ER -