Subpicosecond dielectric breakdown and incubation in TixSi 1-xO2 composite films with adjustable bandgap

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • L. A. Emmert
  • Duy Nguyen
  • I. Cravetchi
  • Mark Mero
  • W. Rudolph
  • Marco Jupe
  • Marc Lappschies
  • Kai Starke
  • Detlev Ristau

External Research Organisations

  • University of New Mexico
  • Laser Zentrum Hannover e.V. (LZH)
View graph of relations

Details

Original languageEnglish
Title of host publicationHigh-Power Laser Ablation VII
Publication statusPublished - 14 May 2008
Externally publishedYes
EventHigh-Power Laser Ablation VII - Taos, NM, United States
Duration: 20 Apr 2008 → 24 Apr 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7005
ISSN (Print)0277-786X

Abstract

Laser induced breakdown of single-layer, ion-beam sputtered Ti xSi1-xO2 composite films was studied using single and multiple pulses from a femtosecond Ti:sapphire laser. The bandgap of this coating material can be gradually adjusted with the composition parameter x. A scaling law with respect to the bandgap energy and pulse duration dependence of the single-pulse damage threshold that was observed previously for pure oxide films was found to apply to the composite films as well. The dependence of the damage threshold as a function of pulse number F(N) was similar to the behavior observed for pure oxide films. It was possible to explain the dependence as a function of pulse number using a theoretical model based on the formation and accumulation of defects. The shape of F(N) can be used to estimate the role of shallow traps and deep traps on the multiple-pulse breakdown behavior.

Keywords

    Composite films, Dielectric thin films, Laser breakdown, Laser damage

ASJC Scopus subject areas

Cite this

Subpicosecond dielectric breakdown and incubation in TixSi 1-xO2 composite films with adjustable bandgap. / Emmert, L. A.; Nguyen, Duy; Cravetchi, I. et al.
High-Power Laser Ablation VII. 2008. 70051V (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7005).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Emmert, LA, Nguyen, D, Cravetchi, I, Mero, M, Rudolph, W, Jupe, M, Lappschies, M, Starke, K & Ristau, D 2008, Subpicosecond dielectric breakdown and incubation in TixSi 1-xO2 composite films with adjustable bandgap. in High-Power Laser Ablation VII., 70051V, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7005, High-Power Laser Ablation VII, Taos, NM, United States, 20 Apr 2008. https://doi.org/10.1117/12.785154
Emmert, L. A., Nguyen, D., Cravetchi, I., Mero, M., Rudolph, W., Jupe, M., Lappschies, M., Starke, K., & Ristau, D. (2008). Subpicosecond dielectric breakdown and incubation in TixSi 1-xO2 composite films with adjustable bandgap. In High-Power Laser Ablation VII Article 70051V (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7005). https://doi.org/10.1117/12.785154
Emmert LA, Nguyen D, Cravetchi I, Mero M, Rudolph W, Jupe M et al. Subpicosecond dielectric breakdown and incubation in TixSi 1-xO2 composite films with adjustable bandgap. In High-Power Laser Ablation VII. 2008. 70051V. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.785154
Emmert, L. A. ; Nguyen, Duy ; Cravetchi, I. et al. / Subpicosecond dielectric breakdown and incubation in TixSi 1-xO2 composite films with adjustable bandgap. High-Power Laser Ablation VII. 2008. (Proceedings of SPIE - The International Society for Optical Engineering).
Download
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AU - Emmert, L. A.

AU - Nguyen, Duy

AU - Cravetchi, I.

AU - Mero, Mark

AU - Rudolph, W.

AU - Jupe, Marco

AU - Lappschies, Marc

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AU - Ristau, Detlev

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AB - Laser induced breakdown of single-layer, ion-beam sputtered Ti xSi1-xO2 composite films was studied using single and multiple pulses from a femtosecond Ti:sapphire laser. The bandgap of this coating material can be gradually adjusted with the composition parameter x. A scaling law with respect to the bandgap energy and pulse duration dependence of the single-pulse damage threshold that was observed previously for pure oxide films was found to apply to the composite films as well. The dependence of the damage threshold as a function of pulse number F(N) was similar to the behavior observed for pure oxide films. It was possible to explain the dependence as a function of pulse number using a theoretical model based on the formation and accumulation of defects. The shape of F(N) can be used to estimate the role of shallow traps and deep traps on the multiple-pulse breakdown behavior.

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