Details
| Original language | English |
|---|---|
| Pages (from-to) | 105-108 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 46 |
| Issue number | 1 |
| Publication status | Published - May 1999 |
| Externally published | Yes |
| Event | 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven Duration: 22 Sept 1998 → 24 Sept 1998 |
Abstract
Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below λ/2. In the first approach we inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms with a magnetic substructure in the electronic ground state are strongly sensitive to the polarization of the light field. Both techniques produce sub-100 nm chromium structures in one and two dimensions on silicon substrates.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Microelectronic Engineering, Vol. 46, No. 1, 05.1999, p. 105-108.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Sub-100 nm structures by neutral atom lithography
AU - Schulze, Th
AU - Brezger, B.
AU - Schmidt, Piet Oliver
AU - Mertens, R.
AU - Bell, A. S.
AU - Pfau, T.
AU - Mlynek, J.
N1 - Funding information: We appreciate financial support by the Deutsche Forschungsgemeinschaft (SFB 513) and the Optik Zentrum Konstanz.
PY - 1999/5
Y1 - 1999/5
N2 - Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below λ/2. In the first approach we inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms with a magnetic substructure in the electronic ground state are strongly sensitive to the polarization of the light field. Both techniques produce sub-100 nm chromium structures in one and two dimensions on silicon substrates.
AB - Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lithography). By making use of two special features of the atom-light interaction we wrote structures with periods below λ/2. In the first approach we inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms with a magnetic substructure in the electronic ground state are strongly sensitive to the polarization of the light field. Both techniques produce sub-100 nm chromium structures in one and two dimensions on silicon substrates.
UR - http://www.scopus.com/inward/record.url?scp=0033131589&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(99)00026-X
DO - 10.1016/S0167-9317(99)00026-X
M3 - Conference article
AN - SCOPUS:0033131589
VL - 46
SP - 105
EP - 108
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 1
T2 - 1998 International Conference on Micro- and Nanofabrication (MNE98)
Y2 - 22 September 1998 through 24 September 1998
ER -