Details
| Original language | English |
|---|---|
| Title of host publication | 50th Annual Laser Damage Symposium Proceedings - Laser-Induced Damage in Optical Materials 2018 |
| Publisher | SPIE |
| ISBN (electronic) | 9781510621930 |
| Publication status | Published - 16 Nov 2018 |
| Externally published | Yes |
| Event | 50th Annual Laser Damage Symposium - Laser-Induced Damage in Optical Materials 2018 - Boulder, United States Duration: 23 Sept 2018 → 26 Sept 2018 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 10805 |
| ISSN (Print) | 0277-786X |
| ISSN (electronic) | 1996-756X |
Abstract
The defect densities controlling the LIDT of three HfO 2 films with different underlying interfaces were measured using STEREO-LID. This technique measures the actual damage fluence during a 1-on-1 test. The films were tested with pulses of ∼10 ns duration at 1064 nm. The 30-nm HfO 2 films were prepared by ion-beam sputtering: The first was deposited directly on a fused silica substrate; the second was deposited after first laying down a half-wave buffer layer of SiO 2 ; the third was deposited on a half-wave SiO 2 buffer with a gradual transition to HfO 2 . The buffer layer reduces the density of defects triggering damage at low fluence by more than a factor of two, but the gradual interface slightly adds to the defect density. The implications of these results are compared to the damage behavior of a thicker (quarter-wave) HfO 2 film.
Keywords
- 1064 nm, Defect distribution, Dielectric films and interfaces, Laser-induced damage, Nanosecond pulse
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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- BibTeX
- RIS
50th Annual Laser Damage Symposium Proceedings - Laser-Induced Damage in Optical Materials 2018. SPIE, 2018. 108052H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10805).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Study of the role of the interface on the defect density in HfO 2 films using STEREO-LID (Spatio-TEmporally REsolved Optical Laser-Induced Damage)
AU - Emmert, Luke A.
AU - Töpfer, Sebastian
AU - Willemsen, Thomas
AU - Jupé, Marco
AU - Ristau, Detlev
AU - Rudolph, Wolfgang
N1 - Funding information: The authors acknowledge financial support from the College of Arts and Sciences at the University of New Mexico.
PY - 2018/11/16
Y1 - 2018/11/16
N2 - The defect densities controlling the LIDT of three HfO 2 films with different underlying interfaces were measured using STEREO-LID. This technique measures the actual damage fluence during a 1-on-1 test. The films were tested with pulses of ∼10 ns duration at 1064 nm. The 30-nm HfO 2 films were prepared by ion-beam sputtering: The first was deposited directly on a fused silica substrate; the second was deposited after first laying down a half-wave buffer layer of SiO 2 ; the third was deposited on a half-wave SiO 2 buffer with a gradual transition to HfO 2 . The buffer layer reduces the density of defects triggering damage at low fluence by more than a factor of two, but the gradual interface slightly adds to the defect density. The implications of these results are compared to the damage behavior of a thicker (quarter-wave) HfO 2 film.
AB - The defect densities controlling the LIDT of three HfO 2 films with different underlying interfaces were measured using STEREO-LID. This technique measures the actual damage fluence during a 1-on-1 test. The films were tested with pulses of ∼10 ns duration at 1064 nm. The 30-nm HfO 2 films were prepared by ion-beam sputtering: The first was deposited directly on a fused silica substrate; the second was deposited after first laying down a half-wave buffer layer of SiO 2 ; the third was deposited on a half-wave SiO 2 buffer with a gradual transition to HfO 2 . The buffer layer reduces the density of defects triggering damage at low fluence by more than a factor of two, but the gradual interface slightly adds to the defect density. The implications of these results are compared to the damage behavior of a thicker (quarter-wave) HfO 2 film.
KW - 1064 nm
KW - Defect distribution
KW - Dielectric films and interfaces
KW - Laser-induced damage
KW - Nanosecond pulse
UR - http://www.scopus.com/inward/record.url?scp=85061057786&partnerID=8YFLogxK
U2 - 10.1117/12.2500291
DO - 10.1117/12.2500291
M3 - Conference contribution
AN - SCOPUS:85061057786
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - 50th Annual Laser Damage Symposium Proceedings - Laser-Induced Damage in Optical Materials 2018
PB - SPIE
T2 - 50th Annual Laser Damage Symposium - Laser-Induced Damage in Optical Materials 2018
Y2 - 23 September 2018 through 26 September 2018
ER -