Structure and stability of thin praseodymium oxide layers on Si(001)

Research output: Contribution to journal › Conference article › Research › peer review

Authors

  • H. J. Müssig
  • J. Dabrowski
  • K. Ignatovich
  • J. P. Liu
  • V. Zavodinsky
  • H. J. Osten

External Research Organisations

  • Goethe University Frankfurt
View graph of relations

Details

Original languageEnglish
Pages (from-to)783-788
Number of pages6
JournalSolid State Phenomena
Volume82-84
Publication statusPublished - 2002
Externally publishedYes
EventGettering and Defect Engineering in Semiconductor Technology 2001 - Santa Tecla, Italy
Duration: 30 Sept 2001 → 3 Oct 2001

Abstract

Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits. Using STM and XPS, we could show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculations result also the formation of an ultra-thin Si-O interlayer between Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, AES measurements demonstrate that the oxide is completely decomposed above 780°C.

Keywords

    Ab initio simulations, AES, Heteroepitaxial growth, High-K gate material, Initial stages, STM, XPS

ASJC Scopus subject areas

Cite this

Structure and stability of thin praseodymium oxide layers on Si(001). / Müssig, H. J.; Dabrowski, J.; Ignatovich, K. et al.
In: Solid State Phenomena, Vol. 82-84, 2002, p. 783-788.

Research output: Contribution to journal › Conference article › Research › peer review

Müssig, HJ, Dabrowski, J, Ignatovich, K, Liu, JP, Zavodinsky, V & Osten, HJ 2002, 'Structure and stability of thin praseodymium oxide layers on Si(001)', Solid State Phenomena, vol. 82-84, pp. 783-788.
Müssig, H. J., Dabrowski, J., Ignatovich, K., Liu, J. P., Zavodinsky, V., & Osten, H. J. (2002). Structure and stability of thin praseodymium oxide layers on Si(001). Solid State Phenomena, 82-84, 783-788.
Müssig HJ, Dabrowski J, Ignatovich K, Liu JP, Zavodinsky V, Osten HJ. Structure and stability of thin praseodymium oxide layers on Si(001). Solid State Phenomena. 2002;82-84:783-788.
Müssig, H. J. ; Dabrowski, J. ; Ignatovich, K. et al. / Structure and stability of thin praseodymium oxide layers on Si(001). In: Solid State Phenomena. 2002 ; Vol. 82-84. pp. 783-788.
Download
@article{3650fc2693c44244b53cd0cd1becef7e,
title = "Structure and stability of thin praseodymium oxide layers on Si(001)",
abstract = "Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits. Using STM and XPS, we could show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculations result also the formation of an ultra-thin Si-O interlayer between Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, AES measurements demonstrate that the oxide is completely decomposed above 780°C.",
keywords = "Ab initio simulations, AES, Heteroepitaxial growth, High-K gate material, Initial stages, STM, XPS",
author = "M{\"u}ssig, {H. J.} and J. Dabrowski and K. Ignatovich and Liu, {J. P.} and V. Zavodinsky and Osten, {H. J.}",
year = "2002",
language = "English",
volume = "82-84",
pages = "783--788",
note = "Gettering and Defect Engineering in Semiconductor Technology 2001 ; Conference date: 30-09-2001 Through 03-10-2001",

}

Download

TY - JOUR

T1 - Structure and stability of thin praseodymium oxide layers on Si(001)

AU - Müssig, H. J.

AU - Dabrowski, J.

AU - Ignatovich, K.

AU - Liu, J. P.

AU - Zavodinsky, V.

AU - Osten, H. J.

PY - 2002

Y1 - 2002

N2 - Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits. Using STM and XPS, we could show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculations result also the formation of an ultra-thin Si-O interlayer between Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, AES measurements demonstrate that the oxide is completely decomposed above 780°C.

AB - Pr2O3 may be an alternative high-K gate dielectric material for silicon integrated circuits. Using STM and XPS, we could show that the initial stages of heteroepitaxial Pr2O3 grown on Si(001) consist of a mixed PrO2/Pr2O3 phase. First ab initio calculations result also the formation of an ultra-thin Si-O interlayer between Si substrate and Pr2O3. In the monolayer range of deposited Pr2O3, AES measurements demonstrate that the oxide is completely decomposed above 780°C.

KW - Ab initio simulations

KW - AES

KW - Heteroepitaxial growth

KW - High-K gate material

KW - Initial stages

KW - STM

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=17444443121&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17444443121

VL - 82-84

SP - 783

EP - 788

JO - Solid State Phenomena

JF - Solid State Phenomena

SN - 1012-0394

T2 - Gettering and Defect Engineering in Semiconductor Technology 2001

Y2 - 30 September 2001 through 3 October 2001

ER -