Details
| Original language | English |
|---|---|
| Pages (from-to) | 789-794 |
| Number of pages | 6 |
| Journal | Solid State Phenomena |
| Volume | 82-84 |
| Publication status | Published - 2002 |
| Externally published | Yes |
| Event | Gettering and Defect Engineering in Semiconductor Technology 2001 - Santa Tecla, Italy Duration: 30 Sept 2001 → 3 Oct 2001 |
Abstract
We present structural investigations of Pr2O3 films grown epitaxially on Si(001) and Si(111) using ultrahigh vacuum electron beam evaporation. On (001) oriented Si surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations, while perfect epitaxial growth is obtained on Si(111). We find that the structural quality of crystalline Pr2O3 films on Si(001) degrades and interfacial layer forms over time due to air exposure at room temperature. We show that the crystalline quality of the films can be stabilized by capping with Si. The structural degradation can be restored and stabilized by a short anneal in N2. The temperature dependence of this recrystallization process is studied by in-situ XRD measurements.
Keywords
- Heteroepitaxial growth, High-K gate material, TEM, XRD
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Solid State Phenomena, Vol. 82-84, 2002, p. 789-794.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Structural investigations of praseodymium oxide epitaxially grown on silicon
AU - Zaumseil, P.
AU - Bugiel, E.
AU - Liu, J. P.
AU - Osten, H. J.
PY - 2002
Y1 - 2002
N2 - We present structural investigations of Pr2O3 films grown epitaxially on Si(001) and Si(111) using ultrahigh vacuum electron beam evaporation. On (001) oriented Si surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations, while perfect epitaxial growth is obtained on Si(111). We find that the structural quality of crystalline Pr2O3 films on Si(001) degrades and interfacial layer forms over time due to air exposure at room temperature. We show that the crystalline quality of the films can be stabilized by capping with Si. The structural degradation can be restored and stabilized by a short anneal in N2. The temperature dependence of this recrystallization process is studied by in-situ XRD measurements.
AB - We present structural investigations of Pr2O3 films grown epitaxially on Si(001) and Si(111) using ultrahigh vacuum electron beam evaporation. On (001) oriented Si surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations, while perfect epitaxial growth is obtained on Si(111). We find that the structural quality of crystalline Pr2O3 films on Si(001) degrades and interfacial layer forms over time due to air exposure at room temperature. We show that the crystalline quality of the films can be stabilized by capping with Si. The structural degradation can be restored and stabilized by a short anneal in N2. The temperature dependence of this recrystallization process is studied by in-situ XRD measurements.
KW - Heteroepitaxial growth
KW - High-K gate material
KW - TEM
KW - XRD
UR - http://www.scopus.com/inward/record.url?scp=0036130751&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0036130751
VL - 82-84
SP - 789
EP - 794
JO - Solid State Phenomena
JF - Solid State Phenomena
SN - 1012-0394
T2 - Gettering and Defect Engineering in Semiconductor Technology 2001
Y2 - 30 September 2001 through 3 October 2001
ER -