Details
| Original language | English |
|---|---|
| Article number | 7527615 |
| Pages (from-to) | 1175-1182 |
| Number of pages | 8 |
| Journal | IEEE journal of photovoltaics |
| Volume | 6 |
| Issue number | 5 |
| Publication status | Published - Sept 2016 |
Abstract
Ag/Al pastes allow for a sufficiently low contact resistivity of less than 5 mΩ cm2 with boron-doped p+ emitters. A drawback of those pastes is an enlarged recombination at the silicon/metal interface below those contacts, compared with Ag pastes. For previous Ag/Al pastes from 2013, the observed recombination is even higher than theoretically expected for a fully metal-covered surface. Newly developed Ag/Al pastes allow for a significant reduction of the recombination below the contact, compared with a 2013 Ag/Al paste; for example, the J-{\rm{0e,met}} of an \mathrm{92 \Omega / \text{sq}}. p+ emitter has decreased from 3420 down to 1014 fA/cm2 due to the newly developed paste. For an R-{\rm{sheet}} of 137 Ω/sq, the J-{\rm{0e,met}} is 1399 fA/cm2. Structural investigations of those contacts reveal the microscopic appearance of the contacted region. There are contact spikes of metal grown into the silicon. Those spikes cover 1-1.2% of the entire printed finger area. With values for area fraction and depth of the spikes, we conduct simulations of J-{\rm{0e,met}}. With these simulations, we are able to explain the enlarged recombination at the contact interface and describe the experimentally measured J-{\rm{0e,met}} for both Ag/Al pastes described in this paper.
Keywords
- Ag/Al paste, boron emitters, metallization, screen-print contact
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE journal of photovoltaics, Vol. 6, No. 5, 7527615, 09.2016, p. 1175-1182.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Structural Investigation of Printed Ag/Al Contacts on Silicon and Numerical Modeling of Their Contact Recombination
AU - Kiefer, Fabian
AU - Krugener, Jan
AU - Heinemeyer, Frank
AU - Osten, Hans-Jörg
AU - Brendel, Rolf
AU - Peibst, Robby
PY - 2016/9
Y1 - 2016/9
N2 - Ag/Al pastes allow for a sufficiently low contact resistivity of less than 5 mΩ cm2 with boron-doped p+ emitters. A drawback of those pastes is an enlarged recombination at the silicon/metal interface below those contacts, compared with Ag pastes. For previous Ag/Al pastes from 2013, the observed recombination is even higher than theoretically expected for a fully metal-covered surface. Newly developed Ag/Al pastes allow for a significant reduction of the recombination below the contact, compared with a 2013 Ag/Al paste; for example, the J-{\rm{0e,met}} of an \mathrm{92 \Omega / \text{sq}}. p+ emitter has decreased from 3420 down to 1014 fA/cm2 due to the newly developed paste. For an R-{\rm{sheet}} of 137 Ω/sq, the J-{\rm{0e,met}} is 1399 fA/cm2. Structural investigations of those contacts reveal the microscopic appearance of the contacted region. There are contact spikes of metal grown into the silicon. Those spikes cover 1-1.2% of the entire printed finger area. With values for area fraction and depth of the spikes, we conduct simulations of J-{\rm{0e,met}}. With these simulations, we are able to explain the enlarged recombination at the contact interface and describe the experimentally measured J-{\rm{0e,met}} for both Ag/Al pastes described in this paper.
AB - Ag/Al pastes allow for a sufficiently low contact resistivity of less than 5 mΩ cm2 with boron-doped p+ emitters. A drawback of those pastes is an enlarged recombination at the silicon/metal interface below those contacts, compared with Ag pastes. For previous Ag/Al pastes from 2013, the observed recombination is even higher than theoretically expected for a fully metal-covered surface. Newly developed Ag/Al pastes allow for a significant reduction of the recombination below the contact, compared with a 2013 Ag/Al paste; for example, the J-{\rm{0e,met}} of an \mathrm{92 \Omega / \text{sq}}. p+ emitter has decreased from 3420 down to 1014 fA/cm2 due to the newly developed paste. For an R-{\rm{sheet}} of 137 Ω/sq, the J-{\rm{0e,met}} is 1399 fA/cm2. Structural investigations of those contacts reveal the microscopic appearance of the contacted region. There are contact spikes of metal grown into the silicon. Those spikes cover 1-1.2% of the entire printed finger area. With values for area fraction and depth of the spikes, we conduct simulations of J-{\rm{0e,met}}. With these simulations, we are able to explain the enlarged recombination at the contact interface and describe the experimentally measured J-{\rm{0e,met}} for both Ag/Al pastes described in this paper.
KW - Ag/Al paste
KW - boron emitters
KW - metallization
KW - screen-print contact
UR - http://www.scopus.com/inward/record.url?scp=84981725397&partnerID=8YFLogxK
U2 - 10.1109/jphotov.2016.2591318
DO - 10.1109/jphotov.2016.2591318
M3 - Article
AN - SCOPUS:84981725397
VL - 6
SP - 1175
EP - 1182
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 5
M1 - 7527615
ER -