Details
| Original language | English |
|---|---|
| Pages (from-to) | 2323-2327 |
| Number of pages | 5 |
| Journal | Journal of applied physics |
| Volume | 78 |
| Issue number | 4 |
| Publication status | Published - 15 Aug 1995 |
| Externally published | Yes |
Abstract
Besides a great variety of carbon-containing atomic complexes and precipitates in crystalline silicon, new ordered silicon-carbon structures have recently been predicted theoretically by ab initio calculations [Rücker, Methfessel, Bugiel, and Osten, Phys. Rev. Lett. 72, 3578 (1994)] to be possible in highly C-doped epitaxial layers. These layers are strain stabilized. Due to the high mismatch in lattice parameters, pseudomorphic growth is restricted to layer thicknesses of some monolayers only. Four-hundred kV high resolution electron microscopy (HREM) has been applied to study the microscopic structure of the SinC layers grown by molecular beam epitaxy on (001)-oriented silicon substrate. Local ordering of the carbon with a quasiperiodical variation of its distribution over the layer has been observed on HREM micrographs at certain imaging conditions.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 78, No. 4, 15.08.1995, p. 2323-2327.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Structural characterization of SinC δ layers embedded in a silicon matrix
AU - Ruvimov, S.
AU - Bugiel, E.
AU - Osten, H. J.
PY - 1995/8/15
Y1 - 1995/8/15
N2 - Besides a great variety of carbon-containing atomic complexes and precipitates in crystalline silicon, new ordered silicon-carbon structures have recently been predicted theoretically by ab initio calculations [Rücker, Methfessel, Bugiel, and Osten, Phys. Rev. Lett. 72, 3578 (1994)] to be possible in highly C-doped epitaxial layers. These layers are strain stabilized. Due to the high mismatch in lattice parameters, pseudomorphic growth is restricted to layer thicknesses of some monolayers only. Four-hundred kV high resolution electron microscopy (HREM) has been applied to study the microscopic structure of the SinC layers grown by molecular beam epitaxy on (001)-oriented silicon substrate. Local ordering of the carbon with a quasiperiodical variation of its distribution over the layer has been observed on HREM micrographs at certain imaging conditions.
AB - Besides a great variety of carbon-containing atomic complexes and precipitates in crystalline silicon, new ordered silicon-carbon structures have recently been predicted theoretically by ab initio calculations [Rücker, Methfessel, Bugiel, and Osten, Phys. Rev. Lett. 72, 3578 (1994)] to be possible in highly C-doped epitaxial layers. These layers are strain stabilized. Due to the high mismatch in lattice parameters, pseudomorphic growth is restricted to layer thicknesses of some monolayers only. Four-hundred kV high resolution electron microscopy (HREM) has been applied to study the microscopic structure of the SinC layers grown by molecular beam epitaxy on (001)-oriented silicon substrate. Local ordering of the carbon with a quasiperiodical variation of its distribution over the layer has been observed on HREM micrographs at certain imaging conditions.
UR - http://www.scopus.com/inward/record.url?scp=0000774109&partnerID=8YFLogxK
U2 - 10.1063/1.360149
DO - 10.1063/1.360149
M3 - Article
AN - SCOPUS:0000774109
VL - 78
SP - 2323
EP - 2327
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 4
ER -