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Structural Attributes and Photodynamics of Visible Spectrum Quantum Emitters in Hexagonal Boron Nitride

Research output: Contribution to journal › Article › Research › peer review

Authors

  • Nathan Chejanovsky
  • Mohammad Rezai
  • Federico Paolucci
  • Youngwook Kim
  • Ilja Gerhardt

External Research Organisations

  • University of Stuttgart

Details

Original languageEnglish
Pages (from-to)7037-7045
Number of pages9
JournalNano letters
Volume16
Issue number11
Publication statusPublished - 2016
Externally publishedYes

Abstract

Newly discovered van der Waals materials like MoS2, WSe2, hexagonal boron nitride (h-BN), and recently C2N have sparked intensive research to unveil the quantum behavior associated with their 2D structure. Of great interest are 2D materials that host single quantum emitters. h-BN, with a band gap of 5.95 eV, has been shown to host single quantum emitters which are stable at room temperature in the UV and visible spectral range. In this paper we investigate correlations between h-BN structural features and emitter location from bulk down to the monolayer at room temperature. We demonstrate that chemical etching and ion irradiation can generate emitters in h-BN. We analyze the emitters' spectral features and show that they are dominated by the interaction of their electronic transition with a single Raman active mode of h-BN. Photodynamics analysis reveals diverse rates between the electronic states of the emitter. The emitters show excellent photo stability even under ambient conditions and in monolayers. Comparing the excitation polarization between different emitters unveils a connection between defect orientation and the h-BN hexagonal structure. The sharp spectral features, color diversity, room-temperature stability, long-lived metastable states, ease of fabrication, proximity of the emitters to the environment, outstanding chemical stability, and biocompatibility of h-BN provide a completely new class of systems that can be used for sensing and quantum photonics applications.

Keywords

    Hexagonal boron-nitride, Single quantum emitters, Van der Waals materials, van der Waals materials, hexagonal boron-nitride

ASJC Scopus subject areas

Cite this

Structural Attributes and Photodynamics of Visible Spectrum Quantum Emitters in Hexagonal Boron Nitride. / Chejanovsky, Nathan; Rezai, Mohammad; Paolucci, Federico et al.
In: Nano letters, Vol. 16, No. 11, 2016, p. 7037-7045.

Research output: Contribution to journal › Article › Research › peer review

Chejanovsky, N, Rezai, M, Paolucci, F, Kim, Y, Rendler, T, Rouabeh, W, Oliveira, FFD, Herlinger, P, Denisenko, A, Yang, S, Gerhardt, I, Finkler, A, Smet, JH & Wrachtrup, J 2016, 'Structural Attributes and Photodynamics of Visible Spectrum Quantum Emitters in Hexagonal Boron Nitride', Nano letters, vol. 16, no. 11, pp. 7037-7045. https://doi.org/10.1021/acs.nanolett.6b03268
Chejanovsky, N., Rezai, M., Paolucci, F., Kim, Y., Rendler, T., Rouabeh, W., Oliveira, F. F. D., Herlinger, P., Denisenko, A., Yang, S., Gerhardt, I., Finkler, A., Smet, J. H., & Wrachtrup, J. (2016). Structural Attributes and Photodynamics of Visible Spectrum Quantum Emitters in Hexagonal Boron Nitride. Nano letters, 16(11), 7037-7045. https://doi.org/10.1021/acs.nanolett.6b03268
Chejanovsky N, Rezai M, Paolucci F, Kim Y, Rendler T, Rouabeh W et al. Structural Attributes and Photodynamics of Visible Spectrum Quantum Emitters in Hexagonal Boron Nitride. Nano letters. 2016;16(11):7037-7045. doi: 10.1021/acs.nanolett.6b03268
Chejanovsky, Nathan ; Rezai, Mohammad ; Paolucci, Federico et al. / Structural Attributes and Photodynamics of Visible Spectrum Quantum Emitters in Hexagonal Boron Nitride. In: Nano letters. 2016 ; Vol. 16, No. 11. pp. 7037-7045.
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title = "Structural Attributes and Photodynamics of Visible Spectrum Quantum Emitters in Hexagonal Boron Nitride",
abstract = "Newly discovered van der Waals materials like MoS2, WSe2, hexagonal boron nitride (h-BN), and recently C2N have sparked intensive research to unveil the quantum behavior associated with their 2D structure. Of great interest are 2D materials that host single quantum emitters. h-BN, with a band gap of 5.95 eV, has been shown to host single quantum emitters which are stable at room temperature in the UV and visible spectral range. In this paper we investigate correlations between h-BN structural features and emitter location from bulk down to the monolayer at room temperature. We demonstrate that chemical etching and ion irradiation can generate emitters in h-BN. We analyze the emitters' spectral features and show that they are dominated by the interaction of their electronic transition with a single Raman active mode of h-BN. Photodynamics analysis reveals diverse rates between the electronic states of the emitter. The emitters show excellent photo stability even under ambient conditions and in monolayers. Comparing the excitation polarization between different emitters unveils a connection between defect orientation and the h-BN hexagonal structure. The sharp spectral features, color diversity, room-temperature stability, long-lived metastable states, ease of fabrication, proximity of the emitters to the environment, outstanding chemical stability, and biocompatibility of h-BN provide a completely new class of systems that can be used for sensing and quantum photonics applications.",
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AU - Chejanovsky, Nathan

AU - Rezai, Mohammad

AU - Paolucci, Federico

AU - Kim, Youngwook

AU - Rendler, Torsten

AU - Rouabeh, Wafa

AU - Oliveira, Felipe Favaro de

AU - Herlinger, Patrick

AU - Denisenko, Andrej

AU - Yang, Sen

AU - Gerhardt, Ilja

AU - Finkler, Amit

AU - Smet, Jurgen H.

AU - Wrachtrup, Jörg

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