Details
| Original language | English |
|---|---|
| Title of host publication | 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 |
| Pages | 436-440 |
| Number of pages | 5 |
| Publication status | Published - 2009 |
| Event | 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 - Shenzhen, China Duration: 5 Jan 2009 → 8 Jan 2009 |
Publication series
| Name | 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009 |
|---|
Abstract
This paper presents experimental work on studying the detailed structure and strain relaxation of nanometer thick Nd2O3 films epitaxially grown on Si(lll) substrates using molecular beam epitaxy (MBE). Investigations by various diffraction methods demonstrate that the Nd 2O3 layers exhibit a well-ordered cubic bixbyite structure with a single orientation, perfect crystallinity and a sharp interface. The epitaxial relationship between the Nd2O3 layer and the Si substrate is [111]Nd2O3//[III]si and [1-10] Nd2O3//[-110]si. Three-fold in-plane symmetry is observed by both in-situ reflection high-energy electron diffraction after growth and ex situ X-ray diffraction fIlcone scans. By two orthogonal X-ray diffraction scans with high resolutions, the out-of-plane and in-plane lattice mismatches between an 8 nm Nd2O3 layer and Si substrate were precisely estimated to be 3.25% and 0.66% (if we consider two Si unit cells), respectively. We conclude that the 8 nm Nd2O3 layer is partially relaxed with a compressive strain of -1.32% in the inplane direction and a tensile strain of 1.22% in the out-of-plane directions.
Keywords
- GIXD, Molecular beam epitaxy, NdO, Strain relaxation
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
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4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009. 2009. p. 436-440 5068613 (4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Structural and strain relaxation study of epitaxially grown nanothick Nd2O3/Si(111) heterostructure
AU - Wang, Jinxing
AU - Laha, Apurba
AU - Fissel, Andreas
AU - Schwendt, Dominik
AU - Dargis, Rytis
AU - Watahiki, Tatsuro
AU - Shayduk, Roman
AU - Braun, Wolfgang
AU - Liu, Tianmo
AU - Osten, H. Jörg
PY - 2009
Y1 - 2009
N2 - This paper presents experimental work on studying the detailed structure and strain relaxation of nanometer thick Nd2O3 films epitaxially grown on Si(lll) substrates using molecular beam epitaxy (MBE). Investigations by various diffraction methods demonstrate that the Nd 2O3 layers exhibit a well-ordered cubic bixbyite structure with a single orientation, perfect crystallinity and a sharp interface. The epitaxial relationship between the Nd2O3 layer and the Si substrate is [111]Nd2O3//[III]si and [1-10] Nd2O3//[-110]si. Three-fold in-plane symmetry is observed by both in-situ reflection high-energy electron diffraction after growth and ex situ X-ray diffraction fIlcone scans. By two orthogonal X-ray diffraction scans with high resolutions, the out-of-plane and in-plane lattice mismatches between an 8 nm Nd2O3 layer and Si substrate were precisely estimated to be 3.25% and 0.66% (if we consider two Si unit cells), respectively. We conclude that the 8 nm Nd2O3 layer is partially relaxed with a compressive strain of -1.32% in the inplane direction and a tensile strain of 1.22% in the out-of-plane directions.
AB - This paper presents experimental work on studying the detailed structure and strain relaxation of nanometer thick Nd2O3 films epitaxially grown on Si(lll) substrates using molecular beam epitaxy (MBE). Investigations by various diffraction methods demonstrate that the Nd 2O3 layers exhibit a well-ordered cubic bixbyite structure with a single orientation, perfect crystallinity and a sharp interface. The epitaxial relationship between the Nd2O3 layer and the Si substrate is [111]Nd2O3//[III]si and [1-10] Nd2O3//[-110]si. Three-fold in-plane symmetry is observed by both in-situ reflection high-energy electron diffraction after growth and ex situ X-ray diffraction fIlcone scans. By two orthogonal X-ray diffraction scans with high resolutions, the out-of-plane and in-plane lattice mismatches between an 8 nm Nd2O3 layer and Si substrate were precisely estimated to be 3.25% and 0.66% (if we consider two Si unit cells), respectively. We conclude that the 8 nm Nd2O3 layer is partially relaxed with a compressive strain of -1.32% in the inplane direction and a tensile strain of 1.22% in the out-of-plane directions.
KW - GIXD
KW - Molecular beam epitaxy
KW - NdO
KW - Strain relaxation
UR - http://www.scopus.com/inward/record.url?scp=70349659194&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2009.5068613
DO - 10.1109/NEMS.2009.5068613
M3 - Conference contribution
AN - SCOPUS:70349659194
SN - 9781424446308
T3 - 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
SP - 436
EP - 440
BT - 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
T2 - 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
Y2 - 5 January 2009 through 8 January 2009
ER -