Details
| Original language | English |
|---|---|
| Article number | 121801 |
| Journal | Surface Science |
| Volume | 707 |
| Early online date | 27 Jan 2021 |
| Publication status | Published - May 2021 |
Abstract
We studied the adsorption of atomic hydrogen on monolayer graphene and quasi free monolayer graphene, epitaxially grown on SiC(0001). By means of in-situ surface transport measurements, a metal-insulator transition was found on both n- and p-type doped two dimensional electron systems. The detailed analysis of the temperature dependent resistivity revealed that even ultra-low concentrations (nH≈1012 cm−2) of locally chemisorbed H-clusters act as effective scattering centers for the propagating electrons and limit the mean-free path L0∝1/nH. Despite the weak disorder due to adsorption, strong localization was found. The activation energy for destroying the phase coherence within the system is around 30 meV. Our analysis rules out the formation of a band insulator or even a”bad metal” due to adsorption of hydrogen.
Keywords
- Atomic hydrogen adsorption, Graphene, Ioffe-Regel criterion, Metal insulator transition, Surface transport
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Materials Chemistry
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In: Surface Science, Vol. 707, 121801, 05.2021.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Strong localization in weakly disordered epitaxial graphene
AU - Slawig, Diana
AU - Gruschwitz, Markus
AU - Tegenkamp, Christoph
N1 - Funding Information: We gratefully acknowledge the financial support from the VW Foundation (VWZN3161) and the Hannover School for Nanotechnology hsn. We thank also Dr. Davood Momeni Pakdehi and Dr. Klaus Pierz (PTB Braunschweig) to provide us high quality samples.
PY - 2021/5
Y1 - 2021/5
N2 - We studied the adsorption of atomic hydrogen on monolayer graphene and quasi free monolayer graphene, epitaxially grown on SiC(0001). By means of in-situ surface transport measurements, a metal-insulator transition was found on both n- and p-type doped two dimensional electron systems. The detailed analysis of the temperature dependent resistivity revealed that even ultra-low concentrations (nH≈1012 cm−2) of locally chemisorbed H-clusters act as effective scattering centers for the propagating electrons and limit the mean-free path L0∝1/nH. Despite the weak disorder due to adsorption, strong localization was found. The activation energy for destroying the phase coherence within the system is around 30 meV. Our analysis rules out the formation of a band insulator or even a”bad metal” due to adsorption of hydrogen.
AB - We studied the adsorption of atomic hydrogen on monolayer graphene and quasi free monolayer graphene, epitaxially grown on SiC(0001). By means of in-situ surface transport measurements, a metal-insulator transition was found on both n- and p-type doped two dimensional electron systems. The detailed analysis of the temperature dependent resistivity revealed that even ultra-low concentrations (nH≈1012 cm−2) of locally chemisorbed H-clusters act as effective scattering centers for the propagating electrons and limit the mean-free path L0∝1/nH. Despite the weak disorder due to adsorption, strong localization was found. The activation energy for destroying the phase coherence within the system is around 30 meV. Our analysis rules out the formation of a band insulator or even a”bad metal” due to adsorption of hydrogen.
KW - Atomic hydrogen adsorption
KW - Graphene
KW - Ioffe-Regel criterion
KW - Metal insulator transition
KW - Surface transport
UR - http://www.scopus.com/inward/record.url?scp=85100399071&partnerID=8YFLogxK
U2 - 10.1016/j.susc.2021.121801
DO - 10.1016/j.susc.2021.121801
M3 - Article
AN - SCOPUS:85100399071
VL - 707
JO - Surface Science
JF - Surface Science
SN - 0039-6028
M1 - 121801
ER -