Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures

Research output: Contribution to journal › Article › Research › peer review

Authors

  • R. de Vasconcellos Lourenço
  • P. Horenburg
  • P. Henning
  • H. Bremers
  • U. Rossow
  • A. Hangleiter

External Research Organisations

  • Technische Universität Braunschweig
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Details

Original languageEnglish
Article number045122
JournalAIP Advances
Volume14
Issue number4
Publication statusPublished - Apr 2024
Externally publishedYes

Abstract

The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.

ASJC Scopus subject areas

Cite this

Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures. / de Vasconcellos Lourenço, R.; Horenburg, P.; Henning, P. et al.
In: AIP Advances, Vol. 14, No. 4, 045122, 04.2024.

Research output: Contribution to journal › Article › Research › peer review

de Vasconcellos Lourenço, R, Horenburg, P, Henning, P, Bremers, H, Rossow, U & Hangleiter, A 2024, 'Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures', AIP Advances, vol. 14, no. 4, 045122. https://doi.org/10.1063/5.0187072
de Vasconcellos Lourenço, R., Horenburg, P., Henning, P., Bremers, H., Rossow, U., & Hangleiter, A. (2024). Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures. AIP Advances, 14(4), Article 045122. https://doi.org/10.1063/5.0187072
de Vasconcellos Lourenço R, Horenburg P, Henning P, Bremers H, Rossow U, Hangleiter A. Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures. AIP Advances. 2024 Apr;14(4):045122. doi: 10.1063/5.0187072
de Vasconcellos Lourenço, R. ; Horenburg, P. ; Henning, P. et al. / Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures. In: AIP Advances. 2024 ; Vol. 14, No. 4.
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@article{ecd599c7eec7477d825bd87dba443a58,
title = "Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures",
abstract = "The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.",
author = "{de Vasconcellos Louren{\c c}o}, R. and P. Horenburg and P. Henning and H. Bremers and U. Rossow and A. Hangleiter",
note = "Publisher Copyright: {\textcopyright} 2024 Author(s).",
year = "2024",
month = apr,
doi = "10.1063/5.0187072",
language = "English",
volume = "14",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics",
number = "4",

}

Download

TY - JOUR

T1 - Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures

AU - de Vasconcellos Lourenço, R.

AU - Horenburg, P.

AU - Henning, P.

AU - Bremers, H.

AU - Rossow, U.

AU - Hangleiter, A.

N1 - Publisher Copyright: © 2024 Author(s).

PY - 2024/4

Y1 - 2024/4

N2 - The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.

AB - The reduction of the defect density in quantum wells (QWs) is important to maximize the internal quantum efficiency. We investigate non-radiative recombination in GaInN/GaN single QWs (SQWs) grown on In-free and In-containing so-called underlayers (ULs). The non-radiative lifetime of SQWs increases with increasing UL thickness and decreases exponentially with increasing UL growth temperature. Moreover, the presence of low-temperature UL strongly increases the non-radiative lifetime of SQWs. As non-radiative recombination at threading dislocations is efficiently suppressed by means of V-pits, our results suggest that point defects diffuse from the high temperature buffer layer through the UL into the QW. The resulting point defect density in the QW is strongly influenced by the UL growth conditions.

UR - http://www.scopus.com/inward/record.url?scp=85190537946&partnerID=8YFLogxK

U2 - 10.1063/5.0187072

DO - 10.1063/5.0187072

M3 - Article

VL - 14

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 4

M1 - 045122

ER -