Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations

Details

Original language	English
Title of host publication	Modeling in crystal growth
Subtitle of host publication	proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000
Place of Publication	Amsterdam
Publisher	Elsevier
Pages	33-34
Publication status	Published - 2001
Event	3rd International Workshop on Modeling in Crystal Growth - New York Duration: 18 Oct 2000 → 19 Oct 2000 Conference number: 3

Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations. / Muiznieks, Andris; Raming, Georg; Mühlbauer, Alfred et al.
Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier, 2001. p. 33-34.

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research

Muiznieks, A, Raming, G, Mühlbauer, A, Virbulis, J, Hanna, B & von Ammon, W 2001, Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations. in Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Elsevier, Amsterdam, pp. 33-34, 3rd International Workshop on Modeling in Crystal Growth, New York, 18 Oct 2000.

Muiznieks, A., Raming, G., Mühlbauer, A., Virbulis, J., Hanna, B., & von Ammon, W. (2001). Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000 (pp. 33-34). Elsevier.

Muiznieks A, Raming G, Mühlbauer A, Virbulis J, Hanna B, von Ammon W. Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations. In Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. p. 33-34

Muiznieks, Andris ; Raming, Georg ; Mühlbauer, Alfred et al. / Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations. Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam : Elsevier, 2001. pp. 33-34

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title = "Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations",

author = "Andris Muiznieks and Georg Raming and Alfred M{\"u}hlbauer and J. Virbulis and B. Hanna and {von Ammon}, W.",

year = "2001",

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AU - Muiznieks, Andris

AU - Raming, Georg

AU - Mühlbauer, Alfred

AU - Virbulis, J.

AU - Hanna, B.

AU - von Ammon, W.

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BT - Modeling in crystal growth

PB - Elsevier

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