Details
| Original language | English |
|---|---|
| Pages (from-to) | 305-313 |
| Number of pages | 9 |
| Journal | Journal of crystal growth |
| Volume | 230 |
| Issue number | 1-2 |
| Early online date | 10 Jul 2001 |
| Publication status | Published - Aug 2001 |
Abstract
When growing silicon crystals with higher diameter (presently up to 300 mm) the thermal stresses and possible dislocation generation in single crystals become a serious problem for both FZ- and CZ-methods. A two-dimensional problem oriented code for the FEM-package ANSYS has been developed to calculate the temperature field in the growing crystal considering radiation exchange with reflectors and environment and thermal stresses. Comparing calculated stresses with critical stresses, the dislocated zone is determined. A qualitative concept for the occurrence of dislocations using the metastable state is developed. In a parametric study for different thermal boundary conditions and crystal geometries, the thermal stresses are calculated and are discussed. From this, some hints on how to reduce stress and avoid dislocation generation are deduced.
Keywords
- A1. Computer simulation, A1. Stresses, A2. Czochralski method, A2. Floating zone technique, B2. Semiconducting silicon
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 230, No. 1-2, 08.2001, p. 305-313.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - Numerical model and qualitative considerations
AU - Muižnieks, A.
AU - Raming, G.
AU - Mühlbauer, A.
AU - Virbulis, J.
AU - Hanna, B.
AU - Ammon, W. V.
N1 - Copyright: Copyright 2007 Elsevier B.V., All rights reserved.
PY - 2001/8
Y1 - 2001/8
N2 - When growing silicon crystals with higher diameter (presently up to 300 mm) the thermal stresses and possible dislocation generation in single crystals become a serious problem for both FZ- and CZ-methods. A two-dimensional problem oriented code for the FEM-package ANSYS has been developed to calculate the temperature field in the growing crystal considering radiation exchange with reflectors and environment and thermal stresses. Comparing calculated stresses with critical stresses, the dislocated zone is determined. A qualitative concept for the occurrence of dislocations using the metastable state is developed. In a parametric study for different thermal boundary conditions and crystal geometries, the thermal stresses are calculated and are discussed. From this, some hints on how to reduce stress and avoid dislocation generation are deduced.
AB - When growing silicon crystals with higher diameter (presently up to 300 mm) the thermal stresses and possible dislocation generation in single crystals become a serious problem for both FZ- and CZ-methods. A two-dimensional problem oriented code for the FEM-package ANSYS has been developed to calculate the temperature field in the growing crystal considering radiation exchange with reflectors and environment and thermal stresses. Comparing calculated stresses with critical stresses, the dislocated zone is determined. A qualitative concept for the occurrence of dislocations using the metastable state is developed. In a parametric study for different thermal boundary conditions and crystal geometries, the thermal stresses are calculated and are discussed. From this, some hints on how to reduce stress and avoid dislocation generation are deduced.
KW - A1. Computer simulation
KW - A1. Stresses
KW - A2. Czochralski method
KW - A2. Floating zone technique
KW - B2. Semiconducting silicon
UR - http://www.scopus.com/inward/record.url?scp=0035426551&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)01322-7
DO - 10.1016/S0022-0248(01)01322-7
M3 - Conference article
AN - SCOPUS:0035426551
VL - 230
SP - 305
EP - 313
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-2
ER -