Stress relieving with resistive materials based on silicon carbide (SiC)

Research output: Contribution to conferencePaperResearchpeer review

Authors

  • J. Gärtner
  • Ernst Gockenbach
  • H. Borsi
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Details

Original languageEnglish
Pages759-762
Number of pages4
Publication statusPublished - 1998
Event1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
Duration: 27 Sept 199830 Sept 1998

Conference

Conference1998 International Symposium on Electrical Insulating Materials
CityToyohashi, Jpn
Period27 Sept 199830 Sept 1998

Abstract

The stress relieving on components of high-voltage equipment with semiconducting materials based on silicon carbide (SiC) is discussed. Two different types of conducting layers are presented: one kind consists of a ceramic overglaze, the other is based on different organic mastics. The electrical behavior of both types of conductive layers, used in cables and cable accessories are also discussed.

Cite this

Stress relieving with resistive materials based on silicon carbide (SiC). / Gärtner, J.; Gockenbach, Ernst; Borsi, H.
1998. 759-762 Paper presented at 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn.

Research output: Contribution to conferencePaperResearchpeer review

Gärtner, J, Gockenbach, E & Borsi, H 1998, 'Stress relieving with resistive materials based on silicon carbide (SiC)', Paper presented at 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn, 27 Sept 1998 - 30 Sept 1998 pp. 759-762.
Gärtner, J., Gockenbach, E., & Borsi, H. (1998). Stress relieving with resistive materials based on silicon carbide (SiC). 759-762. Paper presented at 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn.
Gärtner J, Gockenbach E, Borsi H. Stress relieving with resistive materials based on silicon carbide (SiC). 1998. Paper presented at 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn.
Gärtner, J. ; Gockenbach, Ernst ; Borsi, H. / Stress relieving with resistive materials based on silicon carbide (SiC). Paper presented at 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn.4 p.
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Download

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AU - Gärtner, J.

AU - Gockenbach, Ernst

AU - Borsi, H.

N1 - Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

PY - 1998

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