Details
| Original language | English |
|---|---|
| Title of host publication | Nanomembranes |
| Subtitle of host publication | Materials, Properties, and Applications |
| Editors | Yongfeng Mei, Gaoshan Huang, Xiuling Li |
| Publisher | Wiley-VCH Verlag |
| Pages | 413-448 |
| Number of pages | 36 |
| ISBN (electronic) | 9783527813933 |
| ISBN (print) | 9783527344468 |
| Publication status | Published - 6 Sept 2022 |
Abstract
2D transition metal dichalcogenides (TMDs) are atomically thin semiconductors. They attract great interest because of their unique chemical and physical properties. Features such as an intrinsic direct bandgap, high luminescence yield, and high carrier mobilities are driving the search for novel optoelectronic applications. Due to their high mechanical strength, the application of strain lends itself to deepening the understanding of the underlying physical effects and find novel applications. In this chapter, the composition and chemical bonds of 2D TMDs are reviewed first. After highlighting specific properties such as valley-contrasting physics, optical selection rules, and excitonic effects, the strain-tuning techniques for 2D TMDs will be discussed. Strain can be exerted, e.g. by atomic force microscopy tips, substrate deformation, or piezoelectric actuators. The different types of applicable strain fields and tuning techniques as well as their effect on the material properties are evaluated. Eventually, representative building blocks of related optical and optoelectronic application scenarios and future prospective research will be summarized.
Keywords
- two-dimensional materials transition metal dichalcogenides atomically thin semiconductors strain engineering strain-tuning
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
- Materials Science(all)
- General Materials Science
- Chemistry(all)
- General Chemistry
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Nanomembranes: Materials, Properties, and Applications. ed. / Yongfeng Mei; Gaoshan Huang; Xiuling Li. Wiley-VCH Verlag, 2022. p. 413-448.
Research output: Chapter in book/report/conference proceeding › Contribution to book/anthology › Research › peer review
}
TY - CHAP
T1 - Strain-Tuning of 2 D Transition Metal Dichalcogenides
AU - An, Zhao
AU - Zopf, Michael
AU - Ding, Fei
PY - 2022/9/6
Y1 - 2022/9/6
N2 - 2D transition metal dichalcogenides (TMDs) are atomically thin semiconductors. They attract great interest because of their unique chemical and physical properties. Features such as an intrinsic direct bandgap, high luminescence yield, and high carrier mobilities are driving the search for novel optoelectronic applications. Due to their high mechanical strength, the application of strain lends itself to deepening the understanding of the underlying physical effects and find novel applications. In this chapter, the composition and chemical bonds of 2D TMDs are reviewed first. After highlighting specific properties such as valley-contrasting physics, optical selection rules, and excitonic effects, the strain-tuning techniques for 2D TMDs will be discussed. Strain can be exerted, e.g. by atomic force microscopy tips, substrate deformation, or piezoelectric actuators. The different types of applicable strain fields and tuning techniques as well as their effect on the material properties are evaluated. Eventually, representative building blocks of related optical and optoelectronic application scenarios and future prospective research will be summarized.
AB - 2D transition metal dichalcogenides (TMDs) are atomically thin semiconductors. They attract great interest because of their unique chemical and physical properties. Features such as an intrinsic direct bandgap, high luminescence yield, and high carrier mobilities are driving the search for novel optoelectronic applications. Due to their high mechanical strength, the application of strain lends itself to deepening the understanding of the underlying physical effects and find novel applications. In this chapter, the composition and chemical bonds of 2D TMDs are reviewed first. After highlighting specific properties such as valley-contrasting physics, optical selection rules, and excitonic effects, the strain-tuning techniques for 2D TMDs will be discussed. Strain can be exerted, e.g. by atomic force microscopy tips, substrate deformation, or piezoelectric actuators. The different types of applicable strain fields and tuning techniques as well as their effect on the material properties are evaluated. Eventually, representative building blocks of related optical and optoelectronic application scenarios and future prospective research will be summarized.
KW - two-dimensional materials transition metal dichalcogenides atomically thin semiconductors strain engineering strain-tuning
UR - http://www.scopus.com/inward/record.url?scp=85150591199&partnerID=8YFLogxK
U2 - 10.1002/9783527813933.ch14
DO - 10.1002/9783527813933.ch14
M3 - Contribution to book/anthology
AN - SCOPUS:85150591199
SN - 9783527344468
SP - 413
EP - 448
BT - Nanomembranes
A2 - Mei, Yongfeng
A2 - Huang, Gaoshan
A2 - Li, Xiuling
PB - Wiley-VCH Verlag
ER -