Details
| Original language | English |
|---|---|
| Pages (from-to) | 405-409 |
| Number of pages | 5 |
| Journal | Journal of crystal growth |
| Volume | 157 |
| Issue number | 1-4 |
| Publication status | Published - Dec 1995 |
| Externally published | Yes |
Abstract
Calculations predict that thin layers of certain ordered SinC (n ≥ 4) structures embedded in silicon are considerably more stable than isolated C impurities. These pseudomorphic layers (with carbon concentrations up to 20%) are thermodynamically forbidden. They can only exist due to strain-stabilization. Such layers were grown by molecular beam epitaxy and characterized with high resolution electron microscopy and X-ray photoelectron spectroscopy. The experimental results support the theoretical predictions. Carbon atoms deposited on silicon at moderate temperatures tend not to stay at the surface, but instead readily migrate into the crystal to form a narrow region with high carbon concentration. The energy barrier for this process is much smaller than that for diffusion in the bulk.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 157, No. 1-4, 12.1995, p. 405-409.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Strain-stabilized structures on silicon grown with MBE
AU - Osten, H. J.
AU - Rücker, H.
AU - Methfessel, M.
AU - Bugiel, E.
AU - Ruvimov, S.
AU - Lippert, G.
PY - 1995/12
Y1 - 1995/12
N2 - Calculations predict that thin layers of certain ordered SinC (n ≥ 4) structures embedded in silicon are considerably more stable than isolated C impurities. These pseudomorphic layers (with carbon concentrations up to 20%) are thermodynamically forbidden. They can only exist due to strain-stabilization. Such layers were grown by molecular beam epitaxy and characterized with high resolution electron microscopy and X-ray photoelectron spectroscopy. The experimental results support the theoretical predictions. Carbon atoms deposited on silicon at moderate temperatures tend not to stay at the surface, but instead readily migrate into the crystal to form a narrow region with high carbon concentration. The energy barrier for this process is much smaller than that for diffusion in the bulk.
AB - Calculations predict that thin layers of certain ordered SinC (n ≥ 4) structures embedded in silicon are considerably more stable than isolated C impurities. These pseudomorphic layers (with carbon concentrations up to 20%) are thermodynamically forbidden. They can only exist due to strain-stabilization. Such layers were grown by molecular beam epitaxy and characterized with high resolution electron microscopy and X-ray photoelectron spectroscopy. The experimental results support the theoretical predictions. Carbon atoms deposited on silicon at moderate temperatures tend not to stay at the surface, but instead readily migrate into the crystal to form a narrow region with high carbon concentration. The energy barrier for this process is much smaller than that for diffusion in the bulk.
UR - http://www.scopus.com/inward/record.url?scp=0029633722&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(95)00332-0
DO - 10.1016/0022-0248(95)00332-0
M3 - Article
AN - SCOPUS:0029633722
VL - 157
SP - 405
EP - 409
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-4
ER -