Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si

Research output: Contribution to journalArticleResearchpeer review

Authors

  • H. Rücker
  • M. Methfessel
  • E. Bugiel
  • H. J. Osten

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)3578-3581
Number of pages4
JournalPhysical review letters
Volume72
Issue number22
Publication statusPublished - 1994
Externally publishedYes

Abstract

We present evidence that Si1-xCx layers with x0.20 can be grown pseudomorphically on a Si (001) substrate despite the large difference of the C and Si lattice constants. Calculations based on density-functional theory and a Keating model predict that embedded layers of certain structures with stoichiometry Sin-1C where n=5,6,... are considerably more stable than isolated C impurities. The common feature of these structures is that the carbon atoms tend to arrange as third-nearest neighbors. Multilayer structures grown by molecular beam epitaxy strongly suggest that defect-free heterostructures with such high C concentrations can be fabricated.

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Cite this

Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si. / Rücker, H.; Methfessel, M.; Bugiel, E. et al.
In: Physical review letters, Vol. 72, No. 22, 1994, p. 3578-3581.

Research output: Contribution to journalArticleResearchpeer review

Rücker, H, Methfessel, M, Bugiel, E & Osten, HJ 1994, 'Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si', Physical review letters, vol. 72, no. 22, pp. 3578-3581. https://doi.org/10.1103/PhysRevLett.72.3578
Rücker H, Methfessel M, Bugiel E, Osten HJ. Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si. Physical review letters. 1994;72(22):3578-3581. doi: 10.1103/PhysRevLett.72.3578
Rücker, H. ; Methfessel, M. ; Bugiel, E. et al. / Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si. In: Physical review letters. 1994 ; Vol. 72, No. 22. pp. 3578-3581.
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