Strain-modulated photoelectric properties of self-rolled GaAs/Al0.26Ga0.74As quantum well nanomembrane

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Authors

  • Fei Zhang
  • Xiaofei Nie
  • Gaoshan Huang
  • Honglou Zhen
  • Fei Ding
  • Zengfeng Di
  • Yongfeng Mei

Research Organisations

External Research Organisations

  • Fudan University
  • CAS - Shanghai Institute of Technical Physics
  • CAS - Shanghai Institute of Microsystem and Information Technology
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Details

Original languageEnglish
Article number065003
Number of pages5
JournalApplied Physics Express
Volume12
Issue number6
Early online date23 May 2019
Publication statusPublished - Jun 2019

Abstract

In this study, we investigate the effects of stress/strain on the band structures of self-rolled GaAs/Al0.26 Ga 0.74As quantum wells (QWs). The results show that the two QWs are in different stress/strain statuses and the boundary line locates between the two QWs. Based on spectral characterizations under different bias voltages, we disclose that interface polarization exists in self-rolled nanomembrane. In addition, we find that the responsivity of the QW in tensile strain is higher than that in compressive strain, and therefore we fabricated a self-rolled-down tubular structure with both two QWs in tensile strain to increase the responsivity by ∼52%.

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Cite this

Strain-modulated photoelectric properties of self-rolled GaAs/Al0.26Ga0.74As quantum well nanomembrane. / Zhang, Fei; Nie, Xiaofei; Huang, Gaoshan et al.
In: Applied Physics Express, Vol. 12, No. 6, 065003, 06.2019.

Research output: Contribution to journalArticleResearchpeer review

Zhang F, Nie X, Huang G, Zhen H, Ding F, Di Z et al. Strain-modulated photoelectric properties of self-rolled GaAs/Al0.26Ga0.74As quantum well nanomembrane. Applied Physics Express. 2019 Jun;12(6):065003. Epub 2019 May 23. doi: 10.7567/1882-0786/ab2161
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@article{b5faf41accd84a2a8346ef8fff0ced42,
title = "Strain-modulated photoelectric properties of self-rolled GaAs/Al0.26Ga0.74As quantum well nanomembrane",
abstract = "In this study, we investigate the effects of stress/strain on the band structures of self-rolled GaAs/Al0.26 Ga 0.74As quantum wells (QWs). The results show that the two QWs are in different stress/strain statuses and the boundary line locates between the two QWs. Based on spectral characterizations under different bias voltages, we disclose that interface polarization exists in self-rolled nanomembrane. In addition, we find that the responsivity of the QW in tensile strain is higher than that in compressive strain, and therefore we fabricated a self-rolled-down tubular structure with both two QWs in tensile strain to increase the responsivity by ∼52%.",
author = "Fei Zhang and Xiaofei Nie and Gaoshan Huang and Honglou Zhen and Fei Ding and Zengfeng Di and Yongfeng Mei",
note = "Funding information: This work was financially supported by the National Natural Science Foundation of China (Nos. 61728501 and 61805042), the China Postdoctoral Science Foundation (No. 2018M632014), the Science and Technology Commission of Shanghai Municipality (Nos.18ZR1405100 and 17JC1401700), the Program of Shanghai Academic/Technology Research Leader (16XD1404200), and the Changjiang Young Scholars Program of China.",
year = "2019",
month = jun,
doi = "10.7567/1882-0786/ab2161",
language = "English",
volume = "12",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "6",

}

Download

TY - JOUR

T1 - Strain-modulated photoelectric properties of self-rolled GaAs/Al0.26Ga0.74As quantum well nanomembrane

AU - Zhang, Fei

AU - Nie, Xiaofei

AU - Huang, Gaoshan

AU - Zhen, Honglou

AU - Ding, Fei

AU - Di, Zengfeng

AU - Mei, Yongfeng

N1 - Funding information: This work was financially supported by the National Natural Science Foundation of China (Nos. 61728501 and 61805042), the China Postdoctoral Science Foundation (No. 2018M632014), the Science and Technology Commission of Shanghai Municipality (Nos.18ZR1405100 and 17JC1401700), the Program of Shanghai Academic/Technology Research Leader (16XD1404200), and the Changjiang Young Scholars Program of China.

PY - 2019/6

Y1 - 2019/6

N2 - In this study, we investigate the effects of stress/strain on the band structures of self-rolled GaAs/Al0.26 Ga 0.74As quantum wells (QWs). The results show that the two QWs are in different stress/strain statuses and the boundary line locates between the two QWs. Based on spectral characterizations under different bias voltages, we disclose that interface polarization exists in self-rolled nanomembrane. In addition, we find that the responsivity of the QW in tensile strain is higher than that in compressive strain, and therefore we fabricated a self-rolled-down tubular structure with both two QWs in tensile strain to increase the responsivity by ∼52%.

AB - In this study, we investigate the effects of stress/strain on the band structures of self-rolled GaAs/Al0.26 Ga 0.74As quantum wells (QWs). The results show that the two QWs are in different stress/strain statuses and the boundary line locates between the two QWs. Based on spectral characterizations under different bias voltages, we disclose that interface polarization exists in self-rolled nanomembrane. In addition, we find that the responsivity of the QW in tensile strain is higher than that in compressive strain, and therefore we fabricated a self-rolled-down tubular structure with both two QWs in tensile strain to increase the responsivity by ∼52%.

U2 - 10.7567/1882-0786/ab2161

DO - 10.7567/1882-0786/ab2161

M3 - Article

AN - SCOPUS:85068217716

VL - 12

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 6

M1 - 065003

ER -

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