Details
| Original language | English |
|---|---|
| Article number | 045009 |
| Journal | 2D Materials |
| Volume | 8 |
| Issue number | 4 |
| Publication status | Published - 18 Oct 2021 |
Abstract
The folding of Bernal-stacked bilayer graphene leads to electronic devices that can be understood as combinations of a twisted double-bilayer graphene and a fold. In magnetotransport experiments contributions of the two different parts can be identified. For the twisted double-bilayer graphene Landau fan diagrams with satellite fans depending on twist angle are observed. The fold gives rise to a local minimum in conductance which does not shift with applied perpendicular magnetic field. Regardless of twist angle the fold favors electron doping attributed to compressive strain at the kink geometry. The curvature of the folded structure provides for a systematic explanation, which is also in agreement with the observed correlation between twist angle and interlayer distance. Finally, the appearance of the topological zero line mode formed at the fold is discussed.
Keywords
- Bernal stacking, Folding, Strain-induced doping, Twisted double-bilayer graphene, Zero line mode
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: 2D Materials, Vol. 8, No. 4, 045009, 18.10.2021.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Strain-induced doping and zero line mode at the fold of twisted Bernal-stacked bilayer graphene
AU - Hong, Sung Ju
AU - Xiao, Xiao
AU - Wulferding, Dirk
AU - Belke, Christopher
AU - Lemmens, Peter
AU - Haug, Rolf J.
N1 - Funding Information: This work is supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany?s Excellence Strategy?EXC 2123 Quantum Frontiers?390837967 and within priority program SPP 2244 ?2DMP?, by the state of Lower Saxony via the School for Contacts in Nanosystems and Fundamentals of Physics and Metrology Initiative. Part of this study has been performed using facilities at the LNQE, Leibniz Universit?t Hannover, Germany. P L and D W acknowledge support from QUANOMET-NL4 and the Institute for Basic Science (IBS-R009-Y3).
PY - 2021/10/18
Y1 - 2021/10/18
N2 - The folding of Bernal-stacked bilayer graphene leads to electronic devices that can be understood as combinations of a twisted double-bilayer graphene and a fold. In magnetotransport experiments contributions of the two different parts can be identified. For the twisted double-bilayer graphene Landau fan diagrams with satellite fans depending on twist angle are observed. The fold gives rise to a local minimum in conductance which does not shift with applied perpendicular magnetic field. Regardless of twist angle the fold favors electron doping attributed to compressive strain at the kink geometry. The curvature of the folded structure provides for a systematic explanation, which is also in agreement with the observed correlation between twist angle and interlayer distance. Finally, the appearance of the topological zero line mode formed at the fold is discussed.
AB - The folding of Bernal-stacked bilayer graphene leads to electronic devices that can be understood as combinations of a twisted double-bilayer graphene and a fold. In magnetotransport experiments contributions of the two different parts can be identified. For the twisted double-bilayer graphene Landau fan diagrams with satellite fans depending on twist angle are observed. The fold gives rise to a local minimum in conductance which does not shift with applied perpendicular magnetic field. Regardless of twist angle the fold favors electron doping attributed to compressive strain at the kink geometry. The curvature of the folded structure provides for a systematic explanation, which is also in agreement with the observed correlation between twist angle and interlayer distance. Finally, the appearance of the topological zero line mode formed at the fold is discussed.
KW - Bernal stacking
KW - Folding
KW - Strain-induced doping
KW - Twisted double-bilayer graphene
KW - Zero line mode
UR - http://www.scopus.com/inward/record.url?scp=85114437931&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/ac152e
DO - 10.1088/2053-1583/ac152e
M3 - Article
AN - SCOPUS:85114437931
VL - 8
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 4
M1 - 045009
ER -