Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots

Research output: Contribution to journal › Article › Research › peer review

Authors

  • J. D. Plumhof
  • V. Křápek
  • F. Ding
  • K. D. Jöns
  • R. Hafenbrak
  • P. Klenovský
  • A. Herklotz
  • K. Dörr
  • P. Michler
  • A. Rastelli
  • O. G. Schmidt

External Research Organisations

  • Leibniz Institute for Solid State and Materials Research Dresden (IFW)
  • Masaryk University
  • CAS - Institute of Semiconductors
  • University of Stuttgart
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Details

Original languageEnglish
Article number121302
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number12
Publication statusPublished - 9 Mar 2011
Externally publishedYes

ASJC Scopus subject areas

Cite this

Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots. / Plumhof, J. D.; Křápek, V.; Ding, F. et al.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 12, 121302, 09.03.2011.

Research output: Contribution to journal › Article › Research › peer review

Plumhof, JD, Křápek, V, Ding, F, Jöns, KD, Hafenbrak, R, Klenovský, P, Herklotz, A, Dörr, K, Michler, P, Rastelli, A & Schmidt, OG 2011, 'Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots', Physical Review B - Condensed Matter and Materials Physics, vol. 83, no. 12, 121302. https://doi.org/10.1103/PhysRevB.83.121302
Plumhof, J. D., Křápek, V., Ding, F., Jöns, K. D., Hafenbrak, R., Klenovský, P., Herklotz, A., Dörr, K., Michler, P., Rastelli, A., & Schmidt, O. G. (2011). Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots. Physical Review B - Condensed Matter and Materials Physics, 83(12), Article 121302. https://doi.org/10.1103/PhysRevB.83.121302
Plumhof JD, Křápek V, Ding F, Jöns KD, Hafenbrak R, Klenovský P et al. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots. Physical Review B - Condensed Matter and Materials Physics. 2011 Mar 9;83(12):121302. doi: 10.1103/PhysRevB.83.121302
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AU - Ding, F.

AU - Jöns, K. D.

AU - Hafenbrak, R.

AU - Klenovský, P.

AU - Herklotz, A.

AU - Dörr, K.

AU - Michler, P.

AU - Rastelli, A.

AU - Schmidt, O. G.

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