Details
| Original language | English |
|---|---|
| Pages (from-to) | 3617-3619 |
| Number of pages | 3 |
| Journal | Applied physics letters |
| Volume | 64 |
| Issue number | 26 |
| Publication status | Published - 1994 |
| Externally published | Yes |
Abstract
In this letter we present calculations by three-dimensional finite element method and measurements by convergent beam electron diffraction of the displacement field resulting from misfitting Ge0.85Si0.25 islands on Si(001). A good agreement between the results of both methods indicates that the three-dimensional finite element method is a reliable tool to calculate the strain, and thus the stress field, in such nanostructures. As a result both methods show that the substrate substantially takes part in the elastic relaxation process in such heteroepitaxial systems.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 64, No. 26, 1994, p. 3617-3619.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Strained state of Ge(Si) islands on Si
T2 - Finite element calculations and comparison to convergent beam electron-diffraction measurements
AU - Christiansen, S.
AU - Albrecht, M.
AU - Strunk, H. P.
AU - Maier, H. J.
PY - 1994
Y1 - 1994
N2 - In this letter we present calculations by three-dimensional finite element method and measurements by convergent beam electron diffraction of the displacement field resulting from misfitting Ge0.85Si0.25 islands on Si(001). A good agreement between the results of both methods indicates that the three-dimensional finite element method is a reliable tool to calculate the strain, and thus the stress field, in such nanostructures. As a result both methods show that the substrate substantially takes part in the elastic relaxation process in such heteroepitaxial systems.
AB - In this letter we present calculations by three-dimensional finite element method and measurements by convergent beam electron diffraction of the displacement field resulting from misfitting Ge0.85Si0.25 islands on Si(001). A good agreement between the results of both methods indicates that the three-dimensional finite element method is a reliable tool to calculate the strain, and thus the stress field, in such nanostructures. As a result both methods show that the substrate substantially takes part in the elastic relaxation process in such heteroepitaxial systems.
UR - http://www.scopus.com/inward/record.url?scp=0001583016&partnerID=8YFLogxK
U2 - 10.1063/1.111217
DO - 10.1063/1.111217
M3 - Article
AN - SCOPUS:0001583016
VL - 64
SP - 3617
EP - 3619
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 26
ER -